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Title: Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

Abstract

We report here on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [1]
  1. Univ. of California, Santa Barbara, CA (United States). Materials Dept.
  2. Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Ecole Polytechnique, Palaiseau (France). Lab. of Condensed Matter Physics
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Building Technologies Office (EE-5B)
OSTI Identifier:
1510951
Grant/Contract Number:  
EE0007096
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electroluminescence; quantum wells; semiconductors; photoconductivity; electric currents; photovoltaics; light emitting diodes; recombination reactions; photodiodes; optical properties

Citation Formats

Espenlaub, Andrew C., Alhassan, Abdullah I., Nakamura, Shuji, Weisbuch, Claude, and Speck, James S.. Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes. United States: N. p., 2018. Web. doi:10.1063/1.5021475.
Espenlaub, Andrew C., Alhassan, Abdullah I., Nakamura, Shuji, Weisbuch, Claude, & Speck, James S.. Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes. United States. doi:10.1063/1.5021475.
Espenlaub, Andrew C., Alhassan, Abdullah I., Nakamura, Shuji, Weisbuch, Claude, and Speck, James S.. Tue . "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes". United States. doi:10.1063/1.5021475. https://www.osti.gov/servlets/purl/1510951.
@article{osti_1510951,
title = {Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes},
author = {Espenlaub, Andrew C. and Alhassan, Abdullah I. and Nakamura, Shuji and Weisbuch, Claude and Speck, James S.},
abstractNote = {We report here on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.},
doi = {10.1063/1.5021475},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 112,
place = {United States},
year = {2018},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
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