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Title: Tunable charge to spin conversion in strontium iridate thin films

Abstract

Efficient charge to spin conversion is important for low-power spin logic devices. Spin and charge interconversion is commonly performed using heavy metals and topological insulators, while the field of oxides is not yet fully explored. Strontium iridate thin films were grown, where the different crystal structures form a perfect playground to understand the key factors in obtaining high charge to spin conversion efficiency (i.e.,large spin Hall angle). It was found that the semiconducting Sr 2IrO 4 has a spin Hall angle of ~0.1 (depending on measurement technique), which is promising for a spin-orbit coupled electronic system and comparable to Pt. In contrast, the perovskite SrIrO 3, reported to have a Dirac cone near the Fermi level, has a larger spin Hall angle of 0.3–0.4 degrees. The largest difference between the two materials is a large degree of spin-momentum locking in SrIrO 3, comparable to known topological insulators. A simple semiclassical relationship is found where thespin Hall angle increases for higher degrees of spin-momentum locking and it also increases for lower Fermi wave vectors. Here this relationship is then able to explain the decreased spin Hall angle below 10 nm film thickness in SrIrO 3, by relating it to the correspondinglymore » higher carrier concentration (related to the higher Fermi wavevector). Breaking the commonly believed anticorrelation between resistivity and carrier concentration paves apathway to lower power losses due to resistance while keeping large spin Hall angles.« less

Authors:
 [1];  [2];  [3];  [4];  [5];  [1];  [5];  [5];  [5];  [6];  [2];  [1]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  2. Univ. of Minnesota, Minneapolis, MN (United States)
  3. Univ. of California, Berkeley, CA (United States)
  4. Univ. of California, Berkeley, CA (United States); Purdue Univ., West Lafayette, IN (United States)
  5. Intel Corp., Hillsboro, OR (United States)
  6. Purdue Univ., West Lafayette, IN (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1510784
Alternate Identifier(s):
OSTI ID: 1510835
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 5; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Everhardt, Arnoud S., DC, Mahendra, Huang, Xiaoxi, Sayed, Shehrin, Gosavi, Tanay A., Tang, Yunlong, Lin, Chia -Ching, Manipatruni, Sasikanth, Young, Ian A., Datta, Supriyo, Wang, Jian -Ping, and Ramesh, Ramamoorthy. Tunable charge to spin conversion in strontium iridate thin films. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.051201.
Everhardt, Arnoud S., DC, Mahendra, Huang, Xiaoxi, Sayed, Shehrin, Gosavi, Tanay A., Tang, Yunlong, Lin, Chia -Ching, Manipatruni, Sasikanth, Young, Ian A., Datta, Supriyo, Wang, Jian -Ping, & Ramesh, Ramamoorthy. Tunable charge to spin conversion in strontium iridate thin films. United States. doi:10.1103/PhysRevMaterials.3.051201.
Everhardt, Arnoud S., DC, Mahendra, Huang, Xiaoxi, Sayed, Shehrin, Gosavi, Tanay A., Tang, Yunlong, Lin, Chia -Ching, Manipatruni, Sasikanth, Young, Ian A., Datta, Supriyo, Wang, Jian -Ping, and Ramesh, Ramamoorthy. Mon . "Tunable charge to spin conversion in strontium iridate thin films". United States. doi:10.1103/PhysRevMaterials.3.051201.
@article{osti_1510784,
title = {Tunable charge to spin conversion in strontium iridate thin films},
author = {Everhardt, Arnoud S. and DC, Mahendra and Huang, Xiaoxi and Sayed, Shehrin and Gosavi, Tanay A. and Tang, Yunlong and Lin, Chia -Ching and Manipatruni, Sasikanth and Young, Ian A. and Datta, Supriyo and Wang, Jian -Ping and Ramesh, Ramamoorthy},
abstractNote = {Efficient charge to spin conversion is important for low-power spin logic devices. Spin and charge interconversion is commonly performed using heavy metals and topological insulators, while the field of oxides is not yet fully explored. Strontium iridate thin films were grown, where the different crystal structures form a perfect playground to understand the key factors in obtaining high charge to spin conversion efficiency (i.e.,large spin Hall angle). It was found that the semiconducting Sr2IrO4 has a spin Hall angle of ~0.1 (depending on measurement technique), which is promising for a spin-orbit coupled electronic system and comparable to Pt. In contrast, the perovskite SrIrO3, reported to have a Dirac cone near the Fermi level, has a larger spin Hall angle of 0.3–0.4 degrees. The largest difference between the two materials is a large degree of spin-momentum locking in SrIrO3, comparable to known topological insulators. A simple semiclassical relationship is found where thespin Hall angle increases for higher degrees of spin-momentum locking and it also increases for lower Fermi wave vectors. Here this relationship is then able to explain the decreased spin Hall angle below 10 nm film thickness in SrIrO3, by relating it to the correspondingly higher carrier concentration (related to the higher Fermi wavevector). Breaking the commonly believed anticorrelation between resistivity and carrier concentration paves apathway to lower power losses due to resistance while keeping large spin Hall angles.},
doi = {10.1103/PhysRevMaterials.3.051201},
journal = {Physical Review Materials},
issn = {2475-9953},
number = 5,
volume = 3,
place = {United States},
year = {2019},
month = {5}
}

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Works referenced in this record:

Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
journal, March 2003


Room-temperature ferroelectricity in strained SrTiO3
journal, August 2004

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