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Title: Comparison of Electrical and 1/f Noise properties of MoS2 and MoSe2 FETs.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, null
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1510669
Report Number(s):
SAND2018-4321C
662660
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 76th Device Research Conference held June 24-27, 2018 in Santa Barbara, California.
Country of Publication:
United States
Language:
English

Citation Formats

Kwon, Jiseok, Delker, Collin James, Harris, Charles Thomas, Swartzentruber, Brian, Das, Suprem R., and Janes, David B. Comparison of Electrical and 1/f Noise properties of MoS2 and MoSe2 FETs.. United States: N. p., 2018. Web.
Kwon, Jiseok, Delker, Collin James, Harris, Charles Thomas, Swartzentruber, Brian, Das, Suprem R., & Janes, David B. Comparison of Electrical and 1/f Noise properties of MoS2 and MoSe2 FETs.. United States.
Kwon, Jiseok, Delker, Collin James, Harris, Charles Thomas, Swartzentruber, Brian, Das, Suprem R., and Janes, David B. Sun . "Comparison of Electrical and 1/f Noise properties of MoS2 and MoSe2 FETs.". United States. https://www.osti.gov/servlets/purl/1510669.
@article{osti_1510669,
title = {Comparison of Electrical and 1/f Noise properties of MoS2 and MoSe2 FETs.},
author = {Kwon, Jiseok and Delker, Collin James and Harris, Charles Thomas and Swartzentruber, Brian and Das, Suprem R. and Janes, David B.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {4}
}

Conference:
Other availability
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