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Title: Highly Nonlinear III-V Semiconductor Metasurfaces.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1510171
Report Number(s):
SAND2018-3743C
662506
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Cint postdoc series held March 28, 2018 in Albuquerque.
Country of Publication:
United States
Language:
English

Citation Formats

Vabishchevich, Polina, Liu, Sheng, Vaskin, Aleksandr, Reno, John L., Keeler, Gordon A., Peake, Gregory M., Sinclair, Michael B., Staude, Isabelle, and Brener, Igal. Highly Nonlinear III-V Semiconductor Metasurfaces.. United States: N. p., 2018. Web.
Vabishchevich, Polina, Liu, Sheng, Vaskin, Aleksandr, Reno, John L., Keeler, Gordon A., Peake, Gregory M., Sinclair, Michael B., Staude, Isabelle, & Brener, Igal. Highly Nonlinear III-V Semiconductor Metasurfaces.. United States.
Vabishchevich, Polina, Liu, Sheng, Vaskin, Aleksandr, Reno, John L., Keeler, Gordon A., Peake, Gregory M., Sinclair, Michael B., Staude, Isabelle, and Brener, Igal. Sun . "Highly Nonlinear III-V Semiconductor Metasurfaces.". United States. https://www.osti.gov/servlets/purl/1510171.
@article{osti_1510171,
title = {Highly Nonlinear III-V Semiconductor Metasurfaces.},
author = {Vabishchevich, Polina and Liu, Sheng and Vaskin, Aleksandr and Reno, John L. and Keeler, Gordon A. and Peake, Gregory M. and Sinclair, Michael B. and Staude, Isabelle and Brener, Igal},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {4}
}

Conference:
Other availability
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