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Title: Hole-induced electronic and optical transitions in L a 1 - x S r x Fe O 3 epitaxial thin films

Abstract

We have investigated the electronic and optical properties of epitaxial La 1-xSr xFeO 3 for 0 ≤ x ≤ 1 prepared by molecular-beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence-band maximum. Combining valence-band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level as a result of hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a conversion from semiconducting to metallic behavior at x = 1. As a result, low-energy optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1]
  1. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
OSTI Identifier:
1510080
Alternate Identifier(s):
OSTI ID: 1493381
Grant/Contract Number:  
AC02-06CH11357; AC02-05CH11231; PNNL LDRD 69319
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 2; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Epitaxial oxide films; Hole doping; Hybrid functional calculations; LaFeO3; Moleclar beam epitaxy; Optical absorption

Citation Formats

Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark D., Kaspar, Tiffany C., and Chambers, Scott A. Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.025401.
Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark D., Kaspar, Tiffany C., & Chambers, Scott A. Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films. United States. doi:10.1103/PhysRevMaterials.3.025401.
Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark D., Kaspar, Tiffany C., and Chambers, Scott A. Mon . "Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films". United States. doi:10.1103/PhysRevMaterials.3.025401.
@article{osti_1510080,
title = {Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films},
author = {Wang, Le and Du, Yingge and Sushko, Peter V. and Bowden, Mark E. and Stoerzinger, Kelsey A. and Heald, Steven M. and Scafetta, Mark D. and Kaspar, Tiffany C. and Chambers, Scott A.},
abstractNote = {We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for 0 ≤ x ≤ 1 prepared by molecular-beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence-band maximum. Combining valence-band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level as a result of hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a conversion from semiconducting to metallic behavior at x = 1. As a result, low-energy optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.},
doi = {10.1103/PhysRevMaterials.3.025401},
journal = {Physical Review Materials},
issn = {2475-9953},
number = 2,
volume = 3,
place = {United States},
year = {2019},
month = {2}
}

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