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Title: AlGaN-Based PN Diodes for Power Electronics (invited).

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1509604
Report Number(s):
SAND2017-10518C
657390
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 232nd ECS Meeting held October 1-6, 2017 in National Harbor, MD.
Country of Publication:
United States
Language:
English

Citation Formats

Allerman, Andrew A., Crawford, Mary H., Pickrell, Gregory, Kaplar, Robert, Armstrong, Andrew, Dickerson, Jeramy Ray, Klein, Brianna Alexandra, King, Michael Patrick, and Van Heukelom, Michael. AlGaN-Based PN Diodes for Power Electronics (invited).. United States: N. p., 2017. Web.
Allerman, Andrew A., Crawford, Mary H., Pickrell, Gregory, Kaplar, Robert, Armstrong, Andrew, Dickerson, Jeramy Ray, Klein, Brianna Alexandra, King, Michael Patrick, & Van Heukelom, Michael. AlGaN-Based PN Diodes for Power Electronics (invited).. United States.
Allerman, Andrew A., Crawford, Mary H., Pickrell, Gregory, Kaplar, Robert, Armstrong, Andrew, Dickerson, Jeramy Ray, Klein, Brianna Alexandra, King, Michael Patrick, and Van Heukelom, Michael. Fri . "AlGaN-Based PN Diodes for Power Electronics (invited).". United States. https://www.osti.gov/servlets/purl/1509604.
@article{osti_1509604,
title = {AlGaN-Based PN Diodes for Power Electronics (invited).},
author = {Allerman, Andrew A. and Crawford, Mary H. and Pickrell, Gregory and Kaplar, Robert and Armstrong, Andrew and Dickerson, Jeramy Ray and Klein, Brianna Alexandra and King, Michael Patrick and Van Heukelom, Michael},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {9}
}

Conference:
Other availability
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