Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N

Fluegel, B.; Beaton, D. A.; Alberi, K.; Volz, K.; Stolz, W.

doi:10.1063/1.5086181

Title: Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N

Journal Article · Mon Apr 08 00:00:00 EDT 2019 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5086181· OSTI ID:1508957

Fluegel, B. ^[1]; Beaton, D. A. ^[1]; Alberi, K. ^[1]; Volz, K. ^[2]; Stolz, W. ^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Phillips-Univ., Renthof (Germany)

The exciton bound to a pair of nitrogen atoms situated at nearby lattice sites in dilute GaAs:N provides an energetically uniform electronic system, spectrally distinct from pairs with larger or smaller separations, and can even be grown with a uniform pair orientation in the crystal. We use photoluminescence excitation spectroscopy on an ensemble of N pairs to study the narrow continuous energy distribution within two of the individual exchange- and symmetry-split exciton states. Inhomogeneous linewidths of 50-60 ueV vary across the crystal on a mesoscopic scale and can be 30 ueV at microscopic locations indicating that the homogeneous linewidth inferred from previous time-domain measurements is still considerably broadened. While excitation and emission linewidths are similar, results show a small energy shift between them indicative of exciton transfer via phonon-assisted tunneling between spatially separated N pairs. We numerically simulate the tunneling in a spatial network of randomly distributed pairs having a normal distribution of bound exciton energies. Comparing the ensemble excitation-emission energy shift with the measured results shows that the transfer probability is higher than expected from the dilute pair concentration and what is known of the exciton wavefunction spatial extent. Both the broadening and the exciton transfer have implications for the goal of pair-bound excitons as a single- or multi-qubit system.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1508957

Alternate ID(s):: OSTI ID: 1505663

Report Number(s):: NREL/JA-5K00-73378

Journal Information:: Journal of Applied Physics, Vol. 125, Issue 14; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 2 works

Citation information provided by
Web of Science

References (21)

Extremely uniform bound exciton states in nitrogen δ -doped GaAs studied by photoluminescence spectroscopy in external magnetic fields Harada, Yukihiro; Kubo, Terutada; Inoue, Tomoya Journal of Applied Physics, Vol. 110, Issue 8 https://doi.org/10.1063/1.3654015	journal	October 2011
Exciton Energy Transfer in GaP: N Wiesner, P. J.; Street, R. A.; Wolf, H. D. Physical Review Letters, Vol. 35, Issue 20 https://doi.org/10.1103/PhysRevLett.35.1366	journal	November 1975
Thermally activated exciton transfer in ${GaAs}_{1 - x}$ $P_{x}$ :N Kash, J. A.; Mariette, H.; Wolford, D. J. Physical Review B, Vol. 32, Issue 6 https://doi.org/10.1103/PhysRevB.32.3753	journal	September 1985
Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs $_{1 - x}$ N $_{x}$ alloys: The appearance of a mobility edge Alberi, K.; Fluegel, B.; Beaton, D. A. Physical Review B, Vol. 86, Issue 4 https://doi.org/10.1103/PhysRevB.86.041201	journal	July 2012
Crystallographically aligned 1.508 eV nitrogen pairs in ultra-dilute GaAs:N Fluegel, Brian; Beaton, Dan; Hanna, Mark Japanese Journal of Applied Physics, Vol. 57, Issue 9 https://doi.org/10.7567/JJAP.57.090302	journal	July 2018
Epitaxial two-dimensional nitrogen atomic sheet in GaAs Harada, Yukihiro; Yamamoto, Masuki; Baba, Takeshi Applied Physics Letters, Vol. 104, Issue 4 https://doi.org/10.1063/1.4863442	journal	January 2014
Theory of time-resolved luminescence of bound excitons in semiconductor alloys Hjalmarson, Harold P.; Myles, Charles W. Physical Review B, Vol. 39, Issue 9 https://doi.org/10.1103/PhysRevB.39.6216	journal	March 1989
Resonant spin orientation at the exciton level anticrossing in InP quantum dots Masumoto, Yasuaki; Toshiyuki, Ken; Suzuki, Tsukasa Physical Review B, Vol. 77, Issue 11 https://doi.org/10.1103/PhysRevB.77.115331	journal	March 2008
Exciton transfer at low temperature in ${Ga}_{x}$ ${In}_{1 - x}$ P:N and ${GaAs}_{1 - x}$ $P_{x}$ :N Mariette, H.; Kash, J. A.; Wolford, D. J. Physical Review B, Vol. 31, Issue 8 https://doi.org/10.1103/PhysRevB.31.5217	journal	April 1985
Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution Karaiskaj, D.; Mascarenhas, A.; Klem, J. F. Physical Review B, Vol. 76, Issue 12 https://doi.org/10.1103/PhysRevB.76.125209	journal	September 2007
Photoluminescence in a disordered insulator: The trapped-exciton model Kivelson, S.; Gelatt, C. D. Physical Review B, Vol. 26, Issue 8 https://doi.org/10.1103/PhysRevB.26.4646	journal	October 1982
Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs St-Jean, P.; Éthier-Majcher, G.; Francoeur, S. Physical Review B, Vol. 91, Issue 11 https://doi.org/10.1103/PhysRevB.91.115201	journal	March 2015
Impurity perturbation to the host band structure and recoil of the impurity state Zhang, Yong; Fluegel, B.; Hanna, M. C. Physical Review B, Vol. 68, Issue 7 https://doi.org/10.1103/PhysRevB.68.075210	journal	August 2003
Optical Spectroscopy of Single Impurity Centers in Semiconductors Francoeur, S.; Klem, J. F.; Mascarenhas, A. Physical Review Letters, Vol. 93, Issue 6 https://doi.org/10.1103/PhysRevLett.93.067403	journal	August 2004
Exciton tunneling inhibited by disorder in $Ga {As}_{1 - x} P_{x} : N$ Kash, J. A. Physical Review B, Vol. 29, Issue 12 https://doi.org/10.1103/PhysRevB.29.7069	journal	June 1984
Complete quantum control of exciton qubits bound to isoelectronic centres Éthier-Majcher, G.; St-Jean, P.; Boso, G. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms4980	journal	May 2014
Dispersive hopping transport via sites having a Gaussian distribution of energies Schönherr, G.; Bässler, H.; Silver, M. Philosophical Magazine B, Vol. 44, Issue 1 https://doi.org/10.1080/01418638108222366	journal	July 1981
Hopping Conductivity in Disordered Systems Ambegaokar, Vinay; Halperin, B. I.; Langer, J. S. Physical Review B, Vol. 4, Issue 8 https://doi.org/10.1103/PhysRevB.4.2612	journal	October 1971
Single nitrogen dyad magnetoluminescence in GaAs Marcet, S.; Ouellet-Plamondon, C.; Klem, J. F. Physical Review B, Vol. 80, Issue 24 https://doi.org/10.1103/PhysRevB.80.245404	journal	December 2009
Final-state readout of exciton qubits by observing resonantly excited photoluminescence in quantum dots Kuroda, K.; Kuroda, T.; Watanabe, K. Applied Physics Letters, Vol. 90, Issue 5 https://doi.org/10.1063/1.2435600	journal	January 2007
Final-state read-out of exciton qubits by observing resonantly excited photoluminescence in quantum dots Kuroda, K.; Kuroda, T.; Watanabe, K. arXiv https://doi.org/10.48550/arxiv.cond-mat/0612629	text	January 2006

Cited By (1)

Highly Mismatched Semiconductor Alloys: From Atoms to Devices Walukiewicz, Wladyslaw; Zide, Joshua M. O. Journal of Applied Physics, Vol. 127, Issue 1 https://doi.org/10.1063/1.5142248	journal	January 2020

Similar Records

Crystallographically aligned 1.508 eV nitrogen pairs in ultra-dilute GaAs:N

Journal Article · Wed Jul 25 00:00:00 EDT 2018 · Japanese Journal of Applied Physics · OSTI ID:1508957

Fluegel, Brian D.; Beaton, Dan A.; Hanna, Mark; +1 more

Contributions to the optical linewidth of shallow donor-bound excitonic transition in ZnO

Journal Article · Mon Jan 08 00:00:00 EST 2024 · Optica Quantum · OSTI ID:1508957

Niaouris, Vasileios; D’Ambrosia, Samuel H.; Zimmermann, Christian; +5 more

Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides

Journal Article · Fri Sep 18 00:00:00 EDT 2015 · Nature Communications · OSTI ID:1508957

Moody, Galan; Dass, Chandriker Kavir; Hao, Kai; +10 more

Related Subjects

36 MATERIALS SCIENCE
atomic and molecular spectra
excitation energies
photoluminescence excitation spectroscopy
semiconductors
excitons
phonons
photoluminescence spectroscopy
quantum computing

Title: Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N

Citation Formats

References (21)

Cited By (1)

Similar Records

Related Subjects