Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

Nathawat, Jubin; Zhao, Miao; Kwan, Chun-Pui; Yin, Shenchu; Arabchigavkani, Nargess; Randle, Michael; Ramamoorthy, Harihara; He, Guanchen; Somphonsane, Ratchanok; Matsumoto, Naoki; Sakanashi, Kohei; Kida, Michio; Aoki, Nobuyuki; Jin, Zhi; Kim, Yunseob; Kim, Gil-Ho; Watanabe, Kenji; Taniguchi, Takashi; Bird, Jonathan P.

doi:10.1021/acsomega.8b03259

Title: Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

Journal Article · Fri Feb 22 00:00:00 EST 2019 · ACS Omega

DOI:https://doi.org/10.1021/acsomega.8b03259· OSTI ID:1495877

Nathawat, Jubin; Zhao, Miao ^[1]; Kwan, Chun-Pui; Yin, Shenchu; Arabchigavkani, Nargess; Randle, Michael; Ramamoorthy, Harihara;

; Somphonsane, Ratchanok; Matsumoto, Naoki ^[2]; Sakanashi, Kohei ^[2]; Kida, Michio ^[2]; Aoki, Nobuyuki ^[2]; Jin, Zhi ^[1]; Kim, Yunseob ^[3];

^[3]; Watanabe, Kenji ^[4]; Taniguchi, Takashi ^[4];

^[2]

High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, 3 Beitucheng West Road, Chaoyang District, Beijing 100029, PR China
Department of Materials Science, Chiba University, Inage-ku, Chiba 263-8522, Japan
School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan

We use transient electrical measurements to investigate the details of self-heating and charge trapping, in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. Relative to more standard devices, fabricated on SiO2 substrates, en- capsulation is shown to lead to an enhanced immunity to charge-trapping, the influence of which is only apparent under the combined influence of strong gate and drain electric fields. Although the precise source of the trapping remains to be determined, one possibility is that the strong gate field may lower the barriers associated with native defects in the h-BN, allowing them to mediate the capture of energetic carriers from the graphene channel. Self-heating in these devices is identified through the observation of time-dependent variations of the current in graphene, and is found to be described by a time constant consistent with expectations for nonequilibrium phonon conduction into the dielectric layers of the de- vice. Overall, our results suggest that h-BN-encapsulated graphene devices provide an excellent system for implementations in which operation under strongly nonequilibrium conditions are desired.

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Research Organization:: Univ. at Buffalo, NY (United States); King Mongkut’s Inst. of Technology Ladkrabang, Bangkok (Thailand); State Univ. of New York (SUNY), Buffalo, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); King Mongkut’s Inst. of Technology Ladkrabang Research Fund (Thailand)

Grant/Contract Number:: FG02-04ER46180; KREF046102; Thep-61-EQP-KMITL3

OSTI ID:: 1495877

Alternate ID(s):: OSTI ID: 1508782; OSTI ID: 1593706

Journal Information:: ACS Omega, Journal Name: ACS Omega Vol. 4 Journal Issue: 2; ISSN 2470-1343

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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Title: Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

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