Enabling Low-Cost III-V/Si Integration Through Nucleation of GaP on v-Grooved Si Substrates
Growth of III-V materials on Si could enable dramatic cost reduction for III-V PV by eliminating the need for expensive III-V substrates and enabling high-efficiency tandem solar cells. The direct heteroepitaxy of III-V materials on Si for high-efficiency photovoltaics has progressed greatly in recent years, but most studies have focused on off-cut wafers polished using an expensive chemical-mechanical planarization process (which is not used for commercial solar cells). Alternative growth approaches are needed that can enable the integration of high material quality III-Vs with PV-grade Si materials. Here we demonstrate the use of cost-effective patterning and etching approaches to create templates for selective area epitaxy on PV-grade Si substrates. We investigate the nucleation of III-V materials on these substrates.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1508484
- Report Number(s):
- NREL/CP-5900-70839
- Resource Relation:
- Conference: Presented at the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 10-15 June 2018, Waikoloa Village, Hawaii
- Country of Publication:
- United States
- Language:
- English
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