skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Relative importance of various stochastic terms and EUV patterning

Abstract

© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE). An error propagation stochastic model is described and used to study the impact of both photon and photoresist material sources of line-width roughness (LWR). Based on typical chemically amplified resist parameters, material sources of LWR are shown to be of equal importance to photon sources. Of the material sources, quencher is shown to be the most important input noise term. The results show that it is not the relative quencher noise that ultimately matters but rather the absolute quencher noise relative to the mean produced acid count. The results also show that chemical yield is critical and that benefiting from increased absorptivity also requires the chemical yield to be maintained.

Authors:
 [1];  [2]
  1. Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California
  2. Applied Math Solutions, LLC, Newtown, Connecticut
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1508057
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Journal of Micro/Nanolithography, MEMS, and MOEMS
Additional Journal Information:
Journal Volume: 17; Journal Issue: 04; Journal ID: ISSN 1932-5150
Country of Publication:
United States
Language:
English

Citation Formats

Naulleau, Patrick, and Gallatin, Gregg. Relative importance of various stochastic terms and EUV patterning. United States: N. p., 2018. Web. doi:10.1117/1.JMM.17.4.041015.
Naulleau, Patrick, & Gallatin, Gregg. Relative importance of various stochastic terms and EUV patterning. United States. doi:10.1117/1.JMM.17.4.041015.
Naulleau, Patrick, and Gallatin, Gregg. Mon . "Relative importance of various stochastic terms and EUV patterning". United States. doi:10.1117/1.JMM.17.4.041015.
@article{osti_1508057,
title = {Relative importance of various stochastic terms and EUV patterning},
author = {Naulleau, Patrick and Gallatin, Gregg},
abstractNote = {© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE). An error propagation stochastic model is described and used to study the impact of both photon and photoresist material sources of line-width roughness (LWR). Based on typical chemically amplified resist parameters, material sources of LWR are shown to be of equal importance to photon sources. Of the material sources, quencher is shown to be the most important input noise term. The results show that it is not the relative quencher noise that ultimately matters but rather the absolute quencher noise relative to the mean produced acid count. The results also show that chemical yield is critical and that benefiting from increased absorptivity also requires the chemical yield to be maintained.},
doi = {10.1117/1.JMM.17.4.041015},
journal = {Journal of Micro/Nanolithography, MEMS, and MOEMS},
issn = {1932-5150},
number = 04,
volume = 17,
place = {United States},
year = {2018},
month = {10}
}