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Title: Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOx Based Passivated Contacts for High-Efficiency Silicon Solar Cells

Abstract

We have compared the temperature dependence of the poly-Si/SiOx/c-Si contact performance for 1.5 and 2.2 nm thick SiOx. The optimum annealing temperature for these two is different, likely due to the SiOx influencing the extent of dopant diffusion into c-Si. At 1050 degrees C, while a contact with 1.5 nm SiOx significantly breaks up, the one with 2.2 nm SiOx develops pinholes. Using scanning Kelvin probe microscopy, we demonstrate that there is enhanced dopant diffusion through these pinholes. Finally, using electron-beam induced current measurements, we show that pinholes affect the local passivation quality of the c-Si wafer surface.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. Colorado School of Mines
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1507971
Report Number(s):
NREL/CP-5900-71567
Journal ID: ISSN 0160-8371
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Journal Name:
Conference Record of the IEEE Photovoltaic Specialists Conference
Additional Journal Information:
Journal Volume: 2018; Conference: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), Waikoloa, HI (United States), 10-15 Jun 2018; Journal ID: ISSN 0160-8371
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; passivated contact; silicon solar cell; silicon oxide; kelvin probe microscopy; electron-beam induced current

Citation Formats

Kale, Abhijit, Nemeth, William M, Nanayakkara, Sanjini U, Guthrey, Harvey L, Page, Matthew, Al-Jassim, Mowafak M, Agarwal, Sumit, and Stradins, Pauls. Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOx Based Passivated Contacts for High-Efficiency Silicon Solar Cells. United States: N. p., 2018. Web. doi:10.1109/PVSC.2018.8547211.
Kale, Abhijit, Nemeth, William M, Nanayakkara, Sanjini U, Guthrey, Harvey L, Page, Matthew, Al-Jassim, Mowafak M, Agarwal, Sumit, & Stradins, Pauls. Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOx Based Passivated Contacts for High-Efficiency Silicon Solar Cells. United States. https://doi.org/10.1109/PVSC.2018.8547211
Kale, Abhijit, Nemeth, William M, Nanayakkara, Sanjini U, Guthrey, Harvey L, Page, Matthew, Al-Jassim, Mowafak M, Agarwal, Sumit, and Stradins, Pauls. 2018. "Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOx Based Passivated Contacts for High-Efficiency Silicon Solar Cells". United States. https://doi.org/10.1109/PVSC.2018.8547211.
@article{osti_1507971,
title = {Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOx Based Passivated Contacts for High-Efficiency Silicon Solar Cells},
author = {Kale, Abhijit and Nemeth, William M and Nanayakkara, Sanjini U and Guthrey, Harvey L and Page, Matthew and Al-Jassim, Mowafak M and Agarwal, Sumit and Stradins, Pauls},
abstractNote = {We have compared the temperature dependence of the poly-Si/SiOx/c-Si contact performance for 1.5 and 2.2 nm thick SiOx. The optimum annealing temperature for these two is different, likely due to the SiOx influencing the extent of dopant diffusion into c-Si. At 1050 degrees C, while a contact with 1.5 nm SiOx significantly breaks up, the one with 2.2 nm SiOx develops pinholes. Using scanning Kelvin probe microscopy, we demonstrate that there is enhanced dopant diffusion through these pinholes. Finally, using electron-beam induced current measurements, we show that pinholes affect the local passivation quality of the c-Si wafer surface.},
doi = {10.1109/PVSC.2018.8547211},
url = {https://www.osti.gov/biblio/1507971}, journal = {Conference Record of the IEEE Photovoltaic Specialists Conference},
issn = {0160-8371},
number = ,
volume = 2018,
place = {United States},
year = {2018},
month = {11}
}

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