Rb4Ag2BiBr9: A Lead-Free Visible Light Absorbing Halide Semiconductor with Improved Stability

Sharma, Manila; Yangui, Aymen; Whiteside, Vincent R.; Sellers, Ian R.; Han, Dan; Chen, Shiyou; Du, Mao -Hua; Saparov, Bayrammurad

doi:10.1021/acs.inorgchem.8b03623

Title: Rb₄Ag₂BiBr₉: A Lead-Free Visible Light Absorbing Halide Semiconductor with Improved Stability

Journal Article · Fri Feb 15 00:00:00 EST 2019 · Inorganic Chemistry

DOI:https://doi.org/10.1021/acs.inorgchem.8b03623· OSTI ID:1507861

Sharma, Manila ^[1];

^[1]; Whiteside, Vincent R. ^[1]; Sellers, Ian R. ^[1];

^[2];

^[3];

^[4];

^[1]

Univ. of Oklahoma, Norman, OK (United States)
East China Normal Univ., Shanghai (China); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
East China Normal Univ., Shanghai (China)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Replacement of the toxic heavy element lead in metal halide perovskites has been attracting a great interest because the high toxicity and poor air stability are two of the major barriers for their widespread utilization. Recently, mixed-cation double perovskite halides, also known as elpasolites, were proposed as an alternative lead-free candidate for the design of nontoxic perovskite solar cells. Herein, we report a new nontoxic and air stable lead-free all-inorganic semiconductor Rb₄Ag₂BiBr₉ prepared using the mixed-cation approach; however, Rb₄Ag₂BiBr₉ adopts a new structure type (Pearson’s code oP32) featuring BiBr₆ octahedra and AgBr₅ square pyramids that share common edges and corners to form a unique 2D layered non-perovskite structure. Rb₄Ag₂BiBr₉ is also demonstrated to be thermally stable with the measured onset decomposition temperature of T_o = 520 °C. Optical absorption measurements and density functional theory calculations suggest a nearly direct band gap for Rb₄Ag₂BiBr₉. Room temperature photoluminescence (PL) measurements show a broadband weak emission. Furthermore, temperature-dependent and power-dependent PL measurements show a strong competition between multiple emission centers and suggest the coexistence of defect-bound excitons and self-trapped excitons in Rb₄Ag₂BiBr₉.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; AR18-008; 61574059; 61722402; 15SG20; CHE-1726630; CHE-0130835

OSTI ID:: 1507861

Journal Information:: Inorganic Chemistry, Vol. 58, Issue 7; ISSN 0020-1669

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 26 works

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Title: Rb₄Ag₂BiBr₉: A Lead-Free Visible Light Absorbing Halide Semiconductor with Improved Stability