Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Enhancement-mode Al0.7Ga0.3N-channel high electron mobility transistors (HEMTs) were achieved here through a combination of recessed etching and fluorine ion deposition to shift the threshold voltage (VTH) relative to depletion-mode devices by +5.6 V to VTH = +0.5 V. Accounting for the threshold voltage shift (ΔVTH), current densities of approximately 30 to 35 mA/mm and transconductance values of 13 mS/mm were achieved for both the control and enhancement mode devices at gate biases of 1 V and 6.6 V, respectively. Little hysteresis was observed for all devices, with voltage offsets of 20 mV at drain currents of 1.0 × 10-3 mA/mm. Enhancement-mode devices exhibited slightly higher turn-on voltages (+0.38 V) for forward bias gate currents. Piecewise evaluation of a threshold voltage model indicated a ΔVTH of +3.3 V due to a gate recess etching of 12 nm and an additional +2.3 V shift due to fluorine ions near the AlGaN surface.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- NA0003525
- OSTI ID:
- 1507744
- Alternate ID(s):
- OSTI ID: 1501722
- Report Number(s):
- SAND2019-2413J; 673155
- Journal Information:
- Applied Physics Letters, Vol. 114, Issue 11; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
High‐Temperature Operation of Al x Ga 1− x N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides
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journal | February 2020 |
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