Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device

Xue, X.; Watson, T. F.; Helsen, J.; Ward, D. R.; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.; Wehner, S.; Vandersypen, L. M. K.

doi:10.1103/PhysRevX.9.021011

Title: Benchmarking Gate Fidelities in a $Si / SiGe$ Two-Qubit Device

Journal Article · Thu Apr 18 00:00:00 EDT 2019 · Physical Review. X

DOI:https://doi.org/10.1103/PhysRevX.9.021011· OSTI ID:1507615

Xue, X.; Watson, T. F.; Helsen, J.; Ward, D. R.; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.; Wehner, S.; Vandersypen, L. M. K.

We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled-Z gate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.

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Research Organization:: Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-03ER46028

OSTI ID:: 1507615

Alternate ID(s):: OSTI ID: 1609468

Journal Information:: Physical Review. X, Journal Name: Physical Review. X Vol. 9 Journal Issue: 2; ISSN 2160-3308

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 92 works

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Title: Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device

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Title: Benchmarking Gate Fidelities in a $Si / SiGe$ Two-Qubit Device