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Title: Ab Initio Investigation of Charge Trapping Across the Crystalline- Si –Amorphous- Si O 2 Interface

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1507610
Grant/Contract Number:  
SC0004993
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Name: Physical Review Applied Journal Volume: 11 Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Yue-Yang, Zheng, Fan, Jiang, Xiangwei, Luo, Jun-Wei, Li, Shu-Shen, and Wang, Lin-Wang. Ab Initio Investigation of Charge Trapping Across the Crystalline- Si –Amorphous- Si O 2 Interface. United States: N. p., 2019. Web. doi:10.1103/PhysRevApplied.11.044058.
Liu, Yue-Yang, Zheng, Fan, Jiang, Xiangwei, Luo, Jun-Wei, Li, Shu-Shen, & Wang, Lin-Wang. Ab Initio Investigation of Charge Trapping Across the Crystalline- Si –Amorphous- Si O 2 Interface. United States. doi:10.1103/PhysRevApplied.11.044058.
Liu, Yue-Yang, Zheng, Fan, Jiang, Xiangwei, Luo, Jun-Wei, Li, Shu-Shen, and Wang, Lin-Wang. Thu . "Ab Initio Investigation of Charge Trapping Across the Crystalline- Si –Amorphous- Si O 2 Interface". United States. doi:10.1103/PhysRevApplied.11.044058.
@article{osti_1507610,
title = {Ab Initio Investigation of Charge Trapping Across the Crystalline- Si –Amorphous- Si O 2 Interface},
author = {Liu, Yue-Yang and Zheng, Fan and Jiang, Xiangwei and Luo, Jun-Wei and Li, Shu-Shen and Wang, Lin-Wang},
abstractNote = {},
doi = {10.1103/PhysRevApplied.11.044058},
journal = {Physical Review Applied},
issn = {2331-7019},
number = 4,
volume = 11,
place = {United States},
year = {2019},
month = {4}
}

Journal Article:
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Works referenced in this record:

The negative bias temperature instability in MOS devices: A review
journal, February 2006