skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electronic Structure of Tungsten-Doped β -Ga 2 O 3 Compounds

Abstract

Tungsten (W) doped gallium oxide (Ga2O3) (Ga2-2xWxO3, 0.00=x=0.30, GWO) polycrystalline ceramic compounds were synthesized via conventional, high-temperature solid-state reaction method. The effect of W-doping on the crystal structure and electronic structure of the resulting GWO materials is studied in detail. The GWO compounds were single-phase, crystallized in ß-Ga2O3 for x=0.15, at which point the Ga2O3-WO3 composite formation occurs. The average crystallite size increases with increasing W-content; however, the effect is predominant only in the single phase GWO compounds. Corroborating with structural analyses, the X-ray photoelectron spectroscopy (XPS) measurements reveal the chemical state of W ions vary in GWO compounds as a function of W concentration. The mixed chemical valence states of W (W4+ and W6+) were evident in single-phase GWO compounds where the W-concentration is lower. However, W ions exhibit the highest chemical valence state (W6+) for higher x values, which resulted in the Ga2O3-WO3 composite formation. The Ga ions exists in their highest chemical valence state (Ga3+) in all of the GWO compounds. The scientific understanding of the electronic structure of the GWO materials derived as function of W concentration could be useful while considering the W-doped Ga2O3 materials and/or W-Ga2O3 contacts for electronic and optoelectronic device applications.

Authors:
; ; ; ; ORCiD logo
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1507388
Report Number(s):
PNNL-SA-141639
Journal ID: ISSN 2162-8769
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Volume: 8; Journal Issue: 7; Journal ID: ISSN 2162-8769
Publisher:
Electrochemical Society
Country of Publication:
United States
Language:
English
Subject:
W-doping, Ga2O3-WO3 Composite, Electronic Structure

Citation Formats

Zade, Vishal, Mallesham, B., Roy, Swadipta, Shutthanandan, V., and Ramana, C. V. Electronic Structure of Tungsten-Doped β -Ga 2 O 3 Compounds. United States: N. p., 2019. Web. doi:10.1149/2.0121907jss.
Zade, Vishal, Mallesham, B., Roy, Swadipta, Shutthanandan, V., & Ramana, C. V. Electronic Structure of Tungsten-Doped β -Ga 2 O 3 Compounds. United States. doi:10.1149/2.0121907jss.
Zade, Vishal, Mallesham, B., Roy, Swadipta, Shutthanandan, V., and Ramana, C. V. Tue . "Electronic Structure of Tungsten-Doped β -Ga 2 O 3 Compounds". United States. doi:10.1149/2.0121907jss.
@article{osti_1507388,
title = {Electronic Structure of Tungsten-Doped β -Ga 2 O 3 Compounds},
author = {Zade, Vishal and Mallesham, B. and Roy, Swadipta and Shutthanandan, V. and Ramana, C. V.},
abstractNote = {Tungsten (W) doped gallium oxide (Ga2O3) (Ga2-2xWxO3, 0.00=x=0.30, GWO) polycrystalline ceramic compounds were synthesized via conventional, high-temperature solid-state reaction method. The effect of W-doping on the crystal structure and electronic structure of the resulting GWO materials is studied in detail. The GWO compounds were single-phase, crystallized in ß-Ga2O3 for x=0.15, at which point the Ga2O3-WO3 composite formation occurs. The average crystallite size increases with increasing W-content; however, the effect is predominant only in the single phase GWO compounds. Corroborating with structural analyses, the X-ray photoelectron spectroscopy (XPS) measurements reveal the chemical state of W ions vary in GWO compounds as a function of W concentration. The mixed chemical valence states of W (W4+ and W6+) were evident in single-phase GWO compounds where the W-concentration is lower. However, W ions exhibit the highest chemical valence state (W6+) for higher x values, which resulted in the Ga2O3-WO3 composite formation. The Ga ions exists in their highest chemical valence state (Ga3+) in all of the GWO compounds. The scientific understanding of the electronic structure of the GWO materials derived as function of W concentration could be useful while considering the W-doped Ga2O3 materials and/or W-Ga2O3 contacts for electronic and optoelectronic device applications.},
doi = {10.1149/2.0121907jss},
journal = {ECS Journal of Solid State Science and Technology},
issn = {2162-8769},
number = 7,
volume = 8,
place = {United States},
year = {2019},
month = {1}
}