skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Chemical control of the electrical surface properties in donor-doped transition metal oxides

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1507185
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 3 Journal Issue: 4; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Andrä, M., Bluhm, H., Dittmann, R., Schneider, C. M., Waser, R., Mueller, D. N., and Gunkel, F.. Chemical control of the electrical surface properties in donor-doped transition metal oxides. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.044604.
Andrä, M., Bluhm, H., Dittmann, R., Schneider, C. M., Waser, R., Mueller, D. N., & Gunkel, F.. Chemical control of the electrical surface properties in donor-doped transition metal oxides. United States. doi:10.1103/PhysRevMaterials.3.044604.
Andrä, M., Bluhm, H., Dittmann, R., Schneider, C. M., Waser, R., Mueller, D. N., and Gunkel, F.. Mon . "Chemical control of the electrical surface properties in donor-doped transition metal oxides". United States. doi:10.1103/PhysRevMaterials.3.044604.
@article{osti_1507185,
title = {Chemical control of the electrical surface properties in donor-doped transition metal oxides},
author = {Andrä, M. and Bluhm, H. and Dittmann, R. and Schneider, C. M. and Waser, R. and Mueller, D. N. and Gunkel, F.},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.3.044604},
journal = {Physical Review Materials},
issn = {2475-9953},
number = 4,
volume = 3,
place = {United States},
year = {2019},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on April 14, 2020
Publisher's Accepted Manuscript

Save / Share:

Works referenced in this record:

Interface takes charge over Si Oxide electronics
journal, March 2011

  • Schlom, Darrell G.; Mannhart, Jochen
  • Nature Materials, Vol. 10, Issue 3, p. 168-169
  • DOI: 10.1038/nmat2965

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
journal, August 2010

  • Muenstermann, Ruth; Menke, Tobias; Dittmann, Regina
  • Advanced Materials, Vol. 22, Issue 43, p. 4819-4822
  • DOI: 10.1002/adma.201001872

Epitaxial SrTiO3 films with electron mobilities exceeding 30,000?cm2?V-1?s-1
journal, April 2010

  • Son, Junwoo; Moetakef, Pouya; Jalan, Bharat
  • Nature Materials, Vol. 9, Issue 6, p. 482-484
  • DOI: 10.1038/nmat2750

Nanoionics-based resistive switching memories
journal, November 2007

  • Waser, Rainer; Aono, Masakazu
  • Nature Materials, Vol. 6, Issue 11, p. 833-840
  • DOI: 10.1038/nmat2023

Giant tunnel electroresistance for non-destructive readout of ferroelectric states
journal, May 2009

  • Garcia, V.; Fusil, S.; Bouzehouane, K.
  • Nature, Vol. 460, Issue 7251, p. 81-84
  • DOI: 10.1038/nature08128

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009

  • Waser, Rainer; Dittmann, Regina; Staikov, Georgi
  • Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663
  • DOI: 10.1002/adma.200900375