U.S. Department of EnergyOffice of Scientific and Technical Information
Wafer-Scale Fabrication of High-Performance n-Type Polymer Monolayer Transistors Using a Multi-Level Self-Assembly Strategy
Abstract
Wafer-scale fabrication of high-performance uniform organic electronic materials is of great challenge and has rarely been realized before. Previous large-scale fabrication methods always lead to different layer thickness and thereby poor film and device uniformity. Herein, the first demonstration of 4 in. wafer-scale, uniform, and high-performance n-type polymer monolayer films is reported, enabled by controlling the multi-level self-assembly process of conjugated polymers in solution. Since the self-assembly process happened in solution, the uniform 2D polymer monolayers can be facilely deposited on various substrates, and theoretically without size limitations. Polymer monolayer transistors exhibit high electron mobilities of up to 1.88 cm2 V-1 s-1, which is among the highest in n-type monolayer organic transistors. This method allows to easily fabricate n-type conjugated polymers with wafer-scale, high uniformity, low contact resistance, and excellent transistor performance (better than the traditional spin-coating method). This work provides an effective strategy to prepare large-scale and uniform 2D polymer monolayers, which could enable the application of conjugated polymers for wafer-scale sophisticated electronics.
- Authors:
-
[1];
[1]
- Peking Univ., Beijing (China)
- Stanford Univ., Stanford, CA (United States)
- Univ. of Southern Mississippi, Hattiesburg, MS (United States)
- China Academy of Engineering Physics, Mianyang (China)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Univ. of Southern Mississippi, Hattiesburg, MS (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1506955
- Alternate Identifier(s):
- OSTI ID: 1486915; OSTI ID: 1599396; OSTI ID: 1774737; OSTI ID: 1985419
- Grant/Contract Number:
- 21420102005; 21790360; 21722201; 91427303; SC0019361; AC02‐76SF00515
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 31; Journal Issue: 7; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 2D organic materials; conjugated polymers; multi‐level assemblies; polymer monolayers
Citation Formats
Yao, Ze ‐Fan, Zheng, Yu ‐Qing, Li, Qi ‐Yi, Lei, Ting, Zhang, Song, Zou, Lin, Liu, Han ‐Yu, Dou, Jin ‐Hu, Lu, Yang, Wang, Jie ‐Yu, Gu, Xiaodan, and Pei, Jian. Wafer-Scale Fabrication of High-Performance n-Type Polymer Monolayer Transistors Using a Multi-Level Self-Assembly Strategy. United States: N. p., 2018.
Web. doi:10.1002/adma.201806747.
Yao, Ze ‐Fan, Zheng, Yu ‐Qing, Li, Qi ‐Yi, Lei, Ting, Zhang, Song, Zou, Lin, Liu, Han ‐Yu, Dou, Jin ‐Hu, Lu, Yang, Wang, Jie ‐Yu, Gu, Xiaodan, & Pei, Jian. Wafer-Scale Fabrication of High-Performance n-Type Polymer Monolayer Transistors Using a Multi-Level Self-Assembly Strategy. United States. https://doi.org/10.1002/adma.201806747
Yao, Ze ‐Fan, Zheng, Yu ‐Qing, Li, Qi ‐Yi, Lei, Ting, Zhang, Song, Zou, Lin, Liu, Han ‐Yu, Dou, Jin ‐Hu, Lu, Yang, Wang, Jie ‐Yu, Gu, Xiaodan, and Pei, Jian. 2018.
"Wafer-Scale Fabrication of High-Performance n-Type Polymer Monolayer Transistors Using a Multi-Level Self-Assembly Strategy". United States. https://doi.org/10.1002/adma.201806747. https://www.osti.gov/servlets/purl/1506955.
@article{osti_1506955,
title = {Wafer-Scale Fabrication of High-Performance n-Type Polymer Monolayer Transistors Using a Multi-Level Self-Assembly Strategy},
author = {Yao, Ze ‐Fan and Zheng, Yu ‐Qing and Li, Qi ‐Yi and Lei, Ting and Zhang, Song and Zou, Lin and Liu, Han ‐Yu and Dou, Jin ‐Hu and Lu, Yang and Wang, Jie ‐Yu and Gu, Xiaodan and Pei, Jian},
abstractNote = {Wafer-scale fabrication of high-performance uniform organic electronic materials is of great challenge and has rarely been realized before. Previous large-scale fabrication methods always lead to different layer thickness and thereby poor film and device uniformity. Herein, the first demonstration of 4 in. wafer-scale, uniform, and high-performance n-type polymer monolayer films is reported, enabled by controlling the multi-level self-assembly process of conjugated polymers in solution. Since the self-assembly process happened in solution, the uniform 2D polymer monolayers can be facilely deposited on various substrates, and theoretically without size limitations. Polymer monolayer transistors exhibit high electron mobilities of up to 1.88 cm2 V-1 s-1, which is among the highest in n-type monolayer organic transistors. This method allows to easily fabricate n-type conjugated polymers with wafer-scale, high uniformity, low contact resistance, and excellent transistor performance (better than the traditional spin-coating method). This work provides an effective strategy to prepare large-scale and uniform 2D polymer monolayers, which could enable the application of conjugated polymers for wafer-scale sophisticated electronics.},
doi = {10.1002/adma.201806747},
url = {https://www.osti.gov/biblio/1506955},
journal = {Advanced Materials},
issn = {0935-9648},
number = 7,
volume = 31,
place = {United States},
year = {Fri Dec 14 00:00:00 EST 2018},
month = {Fri Dec 14 00:00:00 EST 2018}
}
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Works referencing / citing this record:
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