Wafer-Scale Fabrication of High-Performance n-Type Polymer Monolayer Transistors Using a Multi-Level Self-Assembly Strategy

Yao, Ze ‐Fan; Zheng, Yu ‐Qing; Li, Qi ‐Yi; Lei, Ting; Zhang, Song; Zou, Lin; Liu, Han ‐Yu; Dou, Jin ‐Hu; Lu, Yang; Wang, Jie ‐Yu; Gu, Xiaodan; Pei, Jian

doi:10.1002/adma.201806747

Title: Wafer-Scale Fabrication of High-Performance n-Type Polymer Monolayer Transistors Using a Multi-Level Self-Assembly Strategy

Journal Article · Fri Dec 14 00:00:00 EST 2018 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201806747· OSTI ID:1506955

^[1]; Zheng, Yu ‐Qing ^[2]; Li, Qi ‐Yi ^[1]; Lei, Ting ^[1]; Zhang, Song ^[3]; Zou, Lin ^[4]; Liu, Han ‐Yu ^[1]; Dou, Jin ‐Hu ^[1]; Lu, Yang ^[1]; Wang, Jie ‐Yu ^[1]; Gu, Xiaodan ^[3];

^[1]

Peking Univ., Beijing (China)
Stanford Univ., Stanford, CA (United States)
Univ. of Southern Mississippi, Hattiesburg, MS (United States)
China Academy of Engineering Physics, Mianyang (China)

Wafer-scale fabrication of high-performance uniform organic electronic materials is of great challenge and has rarely been realized before. Previous large-scale fabrication methods always lead to different layer thickness and thereby poor film and device uniformity. Herein, the first demonstration of 4 in. wafer-scale, uniform, and high-performance n-type polymer monolayer films is reported, enabled by controlling the multi-level self-assembly process of conjugated polymers in solution. Since the self-assembly process happened in solution, the uniform 2D polymer monolayers can be facilely deposited on various substrates, and theoretically without size limitations. Polymer monolayer transistors exhibit high electron mobilities of up to 1.88 cm2 V-1 s-1, which is among the highest in n-type monolayer organic transistors. This method allows to easily fabricate n-type conjugated polymers with wafer-scale, high uniformity, low contact resistance, and excellent transistor performance (better than the traditional spin-coating method). This work provides an effective strategy to prepare large-scale and uniform 2D polymer monolayers, which could enable the application of conjugated polymers for wafer-scale sophisticated electronics.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Univ. of Southern Mississippi, Hattiesburg, MS (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: 21420102005; 21790360; 21722201; 91427303; SC0019361; AC02‐76SF00515

OSTI ID:: 1506955

Alternate ID(s):: OSTI ID: 1486915; OSTI ID: 1599396; OSTI ID: 1774737; OSTI ID: 1985419

Journal Information:: Advanced Materials, Vol. 31, Issue 7; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 60 works

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Controlling the Microstructure of Conjugated Polymers in High‐Mobility Monolayer Transistors via the Dissolution Temperature Li, Mengmeng; Bin, Haijun; Jiao, Xuechen Angewandte Chemie International Edition, Vol. 59, Issue 2 https://doi.org/10.1002/anie.201911311	journal	January 2020

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