skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Pulsed-laser epitaxy of topological insulator Bi 2Te 3 thin films

Abstract

Determining optimized conditions necessary to achieve high-quality films by pulsed laser deposition (PLD) for materials with multiple volatile elements is challenging. In this work, we present the optimized growth of epitaxial films of the topological insulator Bi 2Te 3 on Al 2O 3 (0001) substrates using PLD. It is found that the key to maximize film quality requires balanced control of the Ar background pressure (P Ar) and growth temperature (T G). Within a narrow window (200 ≤ P Ar < 350 mTorr and 300 ≤ TG < 350 °C), we find that Bi 2Te 3 thin films are flat, stoichiometric, and of the highest crystalline quality. This is a result of balancing the kinetics of ablated species in the PLD plume and the bulk thermodynamics of Bi 2Te 3. This work demonstrates that a careful optimization of the growth parameters can enable PLD to successfully grow multielemental materials containing volatile constituents.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1];  [2]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [3]; ORCiD logo [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  2. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1506776
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 7; Journal Issue: 4; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

Citation Formats

Liao, Zhaoliang, Brahlek, Matthew, Ok, Jong Mok, Nuckols, Lauren, Sharma, Yogesh, Lu, Qiyang, Zhang, Yanwen, and Lee, Ho Nyung. Pulsed-laser epitaxy of topological insulator Bi2Te3 thin films. United States: N. p., 2019. Web. doi:10.1063/1.5088190.
Liao, Zhaoliang, Brahlek, Matthew, Ok, Jong Mok, Nuckols, Lauren, Sharma, Yogesh, Lu, Qiyang, Zhang, Yanwen, & Lee, Ho Nyung. Pulsed-laser epitaxy of topological insulator Bi2Te3 thin films. United States. doi:10.1063/1.5088190.
Liao, Zhaoliang, Brahlek, Matthew, Ok, Jong Mok, Nuckols, Lauren, Sharma, Yogesh, Lu, Qiyang, Zhang, Yanwen, and Lee, Ho Nyung. Mon . "Pulsed-laser epitaxy of topological insulator Bi2Te3 thin films". United States. doi:10.1063/1.5088190. https://www.osti.gov/servlets/purl/1506776.
@article{osti_1506776,
title = {Pulsed-laser epitaxy of topological insulator Bi2Te3 thin films},
author = {Liao, Zhaoliang and Brahlek, Matthew and Ok, Jong Mok and Nuckols, Lauren and Sharma, Yogesh and Lu, Qiyang and Zhang, Yanwen and Lee, Ho Nyung},
abstractNote = {Determining optimized conditions necessary to achieve high-quality films by pulsed laser deposition (PLD) for materials with multiple volatile elements is challenging. In this work, we present the optimized growth of epitaxial films of the topological insulator Bi2Te3 on Al2O3 (0001) substrates using PLD. It is found that the key to maximize film quality requires balanced control of the Ar background pressure (PAr) and growth temperature (TG). Within a narrow window (200 ≤ PAr < 350 mTorr and 300 ≤ TG < 350 °C), we find that Bi2Te3 thin films are flat, stoichiometric, and of the highest crystalline quality. This is a result of balancing the kinetics of ablated species in the PLD plume and the bulk thermodynamics of Bi2Te3. This work demonstrates that a careful optimization of the growth parameters can enable PLD to successfully grow multielemental materials containing volatile constituents.},
doi = {10.1063/1.5088190},
journal = {APL Materials},
issn = {2166-532X},
number = 4,
volume = 7,
place = {United States},
year = {2019},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications
journal, January 2013

  • He, Liang; Kou, Xufeng; Wang, Kang L.
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 1-2, p. 50-63
  • DOI: 10.1002/pssr.201307003

Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3Nanodevices
journal, December 2010

  • Steinberg, Hadar; Gardner, Dillon R.; Lee, Young S.
  • Nano Letters, Vol. 10, Issue 12, p. 5032-5036
  • DOI: 10.1021/nl1032183