Large quantum-spin-Hall gap in single-layer 1T' WSe2

Chen, P.; Pai, Woei Wu; Chan, Y. -H.; Sun, W. -L.; Xu, C. -Z.; Lin, D. -S.; Chou, M. Y.; Fedorov, A. -V.; Chiang, T. -C.

doi:10.1038/s41467-018-04395-2

Title: Large quantum-spin-Hall gap in single-layer 1T' WSe₂

Journal Article · Mon May 21 00:00:00 EDT 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-04395-2· OSTI ID:1506388

^[1]; Pai, Woei Wu ^[2]; Chan, Y. -H. ^[3]; Sun, W. -L. ^[4];

^[5]; Lin, D. -S. ^[4]; Chou, M. Y. ^[6]; Fedorov, A. -V. ^[7]; Chiang, T. -C. ^[8]

University of Illinois at Urbana-Champaign, Urbana, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
National Taiwan Univ., Taipei (Taiwan)
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei (Taiwan)
National Tsing Hua University, Hsinchu (Taiwan)
University of Illinois at Urbana-Champaign, Urbana, IL (United States)
National Taiwan Univ., Taipei (Taiwan); Georgia Inst. of Technology, Atlanta, GA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
University of Illinois at Urbana-Champaign, Urbana, IL (United States); National Taiwan Univ., Taipei (Taiwan)

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe₂ single layer with the 1T' structure that does not exist in the bulk form of WSe₂. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T' layer and an in-gap edge state located near the layer boundary. The system's 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator-semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231; FG02-07ER46383

OSTI ID:: 1506388

Journal Information:: Nature Communications, Vol. 9, Issue 1; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 96 works

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References (49)

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material Reis, F.; Li, G.; Dudy, L. Science, Vol. 357, Issue 6348 https://doi.org/10.1126/science.aai8142	journal	June 2017
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Phase engineering of transition metal dichalcogenides Voiry, Damien; Mohite, Aditya; Chhowalla, Manish Chemical Society Reviews, Vol. 44, Issue 9 https://doi.org/10.1039/C5CS00151J	journal	January 2015
Topological insulators and superconductors Qi, Xiao-Liang; Zhang, Shou-Cheng Reviews of Modern Physics, Vol. 83, Issue 4 https://doi.org/10.1103/RevModPhys.83.1057	journal	October 2011
Topological edge states in a high-temperature superconductor FeSe/SrTiO3(001) film Wang, Z. F.; Zhang, Huimin; Liu, Defa Nature Materials, Vol. 15, Issue 9 https://doi.org/10.1038/nmat4686	journal	July 2016
Two-dimensional transition metal dichalcogenides with a hexagonal lattice: Room-temperature quantum spin Hall insulators Ma, Yandong; Kou, Liangzhi; Li, Xiao Physical Review B, Vol. 93, Issue 3 https://doi.org/10.1103/PhysRevB.93.035442	journal	January 2016
Charge density wave transition in single-layer titanium diselenide Chen, P.; Chan, Y. -H.; Fang, X. -Y. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9943	journal	November 2015
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
Negative electronic compressibility and tunable spin splitting in WSe2 Riley, J. M.; Meevasana, W.; Bawden, L. Nature Nanotechnology, Vol. 10, Issue 12 https://doi.org/10.1038/nnano.2015.217	journal	September 2015
Understanding topological phase transition in monolayer transition metal dichalcogenides Choe, Duk-Hyun; Sung, Ha-Jun; Chang, K. J. Physical Review B, Vol. 93, Issue 12 https://doi.org/10.1103/PhysRevB.93.125109	journal	March 2016
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference Lin, Chun-Liang; Arafune, Ryuichi; Liu, Ro-Ya ACS Nano, Vol. 11, Issue 11 https://doi.org/10.1021/acsnano.7b06179	journal	September 2017
$Z_{2}$ Topological Order and the Quantum Spin Hall Effect Kane, C. L.; Mele, E. J. Physical Review Letters, Vol. 95, Issue 14, Article No. 146802 https://doi.org/10.1103/PhysRevLett.95.146802	journal	September 2005
Quantum Spin Hall Insulator State in HgTe Quantum Wells Konig, M.; Wiedmann, S.; Brune, C. Science, Vol. 318, Issue 5851, p. 766-770 https://doi.org/10.1126/science.1148047	journal	November 2007
Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe ₂ Thin Films Zhang, Yi; Ugeda, Miguel M.; Jin, Chenhao Nano Letters, Vol. 16, Issue 4 https://doi.org/10.1021/acs.nanolett.6b00059	journal	March 2016
Ab initio molecular dynamics for open-shell transition metals Kresse, G.; Hafner, J. Physical Review B, Vol. 48, Issue 17 https://doi.org/10.1103/PhysRevB.48.13115	journal	November 1993
Quantum Spin Hall Effect in Graphene Kane, C. L.; Mele, E. J. Physical Review Letters, Vol. 95, Issue 22 https://doi.org/10.1103/PhysRevLett.95.226801	journal	November 2005
Colloquium: Topological insulators Hasan, M. Z.; Kane, C. L. Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067 https://doi.org/10.1103/RevModPhys.82.3045	journal	November 2010
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells Bernevig, B. A.; Hughes, T. L.; Zhang, S.-C. Science, Vol. 314, Issue 5806, p. 1757-1761 https://doi.org/10.1126/science.1133734	journal	December 2006
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates Wang, Qingyan; Zhang, Wenhao; Wang, Lili Journal of Physics: Condensed Matter, Vol. 25, Issue 9 https://doi.org/10.1088/0953-8984/25/9/095002	journal	January 2013
Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface Zhou, Miao; Ming, Wenmei; Liu, Zheng Proceedings of the National Academy of Sciences, Vol. 111, Issue 40 https://doi.org/10.1073/pnas.1409701111	journal	September 2014
Spin- and valley-coupled electronic states in monolayer WSe ₂ on bilayer graphene Sugawara, K.; Sato, T.; Tanaka, Y. Applied Physics Letters, Vol. 107, Issue 7 https://doi.org/10.1063/1.4928658	journal	August 2015
Quantum Spin Hall Effect Bernevig, B. Andrei; Zhang, Shou-Cheng Physical Review Letters, Vol. 96, Issue 10 https://doi.org/10.1103/PhysRevLett.96.106802	journal	March 2006
Large-Gap Quantum Spin Hall Insulators in Tin Films Xu, Yong; Yan, Binghai; Zhang, Hai-Jun Physical Review Letters, Vol. 111, Issue 13 https://doi.org/10.1103/PhysRevLett.111.136804	journal	September 2013
Edge conduction in monolayer WTe2 Fei, Zaiyao; Palomaki, Tauno; Wu, Sanfeng Nature Physics, Vol. 13, Issue 7 https://doi.org/10.1038/nphys4091	journal	April 2017
Quantum spin Hall effect in two-dimensional transition metal dichalcogenides Qian, X.; Liu, J.; Fu, L. Science, Vol. 346, Issue 6215 https://doi.org/10.1126/science.1256815	journal	November 2014
Suppression and emergence of charge-density waves at the surfaces of layered 1 T -TiSe ₂ and 1 T -TaS ₂ by in situ Rb deposition Rossnagel, K. New Journal of Physics, Vol. 12, Issue 12 https://doi.org/10.1088/1367-2630/12/12/125018	journal	December 2010
Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling Murakami, Shuichi Physical Review Letters, Vol. 97, Issue 23 https://doi.org/10.1103/PhysRevLett.97.236805	journal	December 2006
Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures Xiao, Di; Zhu, Wenguang; Ran, Ying Nature Communications, Vol. 2, Issue 1 https://doi.org/10.1038/ncomms1602	journal	September 2011
Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor Riley, J. M.; Mazzola, F.; Dendzik, M. Nature Physics, Vol. 10, Issue 11 https://doi.org/10.1038/nphys3105	journal	October 2014
Epitaxial growth of two-dimensional stanene Zhu, Feng-feng; Chen, Wei-jiong; Xu, Yong Nature Materials, Vol. 14, Issue 10 https://doi.org/10.1038/nmat4384	journal	August 2015
Room Temperature Quantum Spin Hall Insulators with a Buckled Square Lattice Luo, Wei; Xiang, Hongjun Nano Letters, Vol. 15, Issue 5 https://doi.org/10.1021/acs.nanolett.5b00418	journal	April 2015
Quantum spin Hall state in monolayer 1T'-WTe2 Tang, Shujie; Zhang, Chaofan; Wong, Dillon Nature Physics, Vol. 13, Issue 7 https://doi.org/10.1038/nphys4174	journal	June 2017
Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets Chen, Ruyi; Cui, Qirui; Liao, Liyang Nature Communications, Vol. 12, Issue 1 https://doi.org/10.1038/s41467-021-23414-3	journal	May 2021
High-resolution X-ray luminescence extension imaging Ou, Xiangyu; Qin, Xian; Huang, Bolong Nature, Vol. 590, Issue 7846 https://doi.org/10.1038/s41586-021-03251-6	journal	February 2021
Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect Tatemizo, Nobuyuki; Imada, Saki; Okahara, Kizuna Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-58835-5	journal	February 2020
Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures Xiao, Di; Zhu, Wenguang; Ran, Ying arXiv https://doi.org/10.48550/arxiv.1106.4296	text	January 2011
Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface Zhou, Miao; Ming, Wenmei; Liu, Zheng arXiv https://doi.org/10.48550/arxiv.1411.5314	text	January 2014
Epitaxial Growth of Two-Dimensional Stanene Zhu, Fengfeng; Chen, Wei-jiong; Xu, Yong arXiv https://doi.org/10.48550/arxiv.1506.01601	text	January 2015
Spin- and valley- coupled electronic states in monolayer WSe2 on bilayer graphene Sugawara, K.; Sato, T.; Tanaka, Y. arXiv https://doi.org/10.48550/arxiv.1508.01249	text	January 2015
Two-Dimensional Transition Metal Dichalcogenides with a Hexagonal Lattice: Room Temperature Quantum Spin Hall Insulators Ma, Yandong; Kou, Liangzhi; Li, Xiao arXiv https://doi.org/10.48550/arxiv.1512.03346	text	January 2015
Edge conduction in monolayer WTe2 Fei, Zaiyao; Palomaki, Tauno; Wu, Sanfeng arXiv https://doi.org/10.48550/arxiv.1610.07924	text	January 2016
Quantum Spin Hall Effect Bernevig, B. Andrei; Zhang, Shou-Cheng arXiv https://doi.org/10.48550/arxiv.cond-mat/0504147	text	January 2005
Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling Murakami, Shuichi arXiv https://doi.org/10.48550/arxiv.cond-mat/0607001	text	January 2006
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells Bernevig, B. Andrei; Hughes, Taylor L.; Zhang, Shou-Cheng arXiv https://doi.org/10.48550/arxiv.cond-mat/0611399	text	January 2006
Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor Riley, J. M.; Mazzola, F.; Dendzik, M. arXiv https://doi.org/10.48550/arxiv.1408.6778	text	January 2014
Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2 Tang, Shujie; Zhang, Chaofan; Wong, Dillon arXiv https://doi.org/10.48550/arxiv.1703.03151	text	January 2017

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Evidence for a narrow band gap phase in 1T′ WS ₂ nanosheet Pierucci, Debora; Zribi, Jihene; Livache, Clément Applied Physics Letters, Vol. 115, Issue 3 https://doi.org/10.1063/1.5091997	journal	July 2019
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Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide Liu, Ro-Ya; Lin, Meng-Kai; Chen, Peng Physical Review B, Vol. 100, Issue 21 https://doi.org/10.1103/physrevb.100.214309	journal	December 2019
Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin ${PtTe}_{2}$ Films Lin, Meng-Kai; Villaos, Rovi Angelo B.; Hlevyack, Joseph A. Physical Review Letters, Vol. 124, Issue 3 https://doi.org/10.1103/physrevlett.124.036402	journal	January 2020
Influence of lattice termination on the edge states of the quantum spin Hall insulator monolayer $1 T^{'} − {WTe}_{2}$ Lau, Alexander; Ray, Rajyavardhan; Varjas, Dániel Physical Review Materials, Vol. 3, Issue 5 https://doi.org/10.1103/physrevmaterials.3.054206	journal	May 2019
Detection of second-order topological superconductors by Josephson junctions Zhang, Song-Bo; Trauzettel, Björn Physical Review Research, Vol. 2, Issue 1 https://doi.org/10.1103/physrevresearch.2.012018	journal	January 2020
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