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Title: Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Abstract

To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Here in this paper, PbI 2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI 2-based interfacial semiconductors, PbI 2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is enhanced in MoS 2/PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS2/PbI 2 and WSe 2/PbI2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers; type I band alignment in MoS 2/PbI2 stacks, where fast-transferred charge carriers accumulate in MoS 2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS 2/PbI 2 and WSe 2/PbI 2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS 2, WS 2,more » and WSe 2 monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI 2, providing unprecedented capabilities to engineer the device performance of 2D heterostructures.« less

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [4];  [5];  [6];  [7];  [2];  [8];  [4];  [2];  [9];  [2];  [2];  [2];  [2];  [9];  [5];  [6] more »; ORCiD logo [2]; ORCiD logo [2];  [2] « less
  1. Nanjing Tech Univ., Nanjing (China). Key Lab. of Flexible Electronics (KLOFE) & Inst. of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
  2. Nanjing Tech Univ., Nanjing (China). Key Lab. of Flexible Electronics (KLOFE) & Inst. of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
  3. Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  5. Peking Univ., Beijing (China). School of Physics, State Key Lab. for Mesoscopic Physics
  6. Nanjing Univ. (China). National Lab. of Solid State Microstructures, School of Physics
  7. Nanjing Tech Univ., Nanjing (China). School of Materials Science and Engineering, Center for Programmable Materials
  8. Sun Yat-sen Univ., Guangzhou (China). School of Materials Science and Engineering
  9. Nanjing Univ. (China). National Lab. of Solid-State Microstructures, School of Electronic Science and Engineering Collaborative, Innovation Center of Advanced Microstructures
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1505975
Alternate Identifier(s):
OSTI ID: 1499077
Report Number(s):
LA-UR-18-31375
Journal ID: ISSN 0935-9648
Grant/Contract Number:  
89233218CNA000001
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
Material Science

Citation Formats

Sun, Yan, Zhou, Zishu, Huang, Zhen, Wu, Jiangbin, Zhou, Liujiang, Cheng, Yang, Liu, Jinqiu, Zhu, Chao, Yu, Maotao, Yu, Peng, Zhu, Wei, Liu, Yue, Zhou, Jian, Liu, Bowen, Xie, Hongguang, Cao, Yi, Li, Hai, Wang, Xinran, Liu, Kaihui, Wang, Xiaoyong, Wang, Jianpu, Wang, Lin, and Huang, Wei. Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals. United States: N. p., 2019. Web. doi:10.1002/adma.201806562.
Sun, Yan, Zhou, Zishu, Huang, Zhen, Wu, Jiangbin, Zhou, Liujiang, Cheng, Yang, Liu, Jinqiu, Zhu, Chao, Yu, Maotao, Yu, Peng, Zhu, Wei, Liu, Yue, Zhou, Jian, Liu, Bowen, Xie, Hongguang, Cao, Yi, Li, Hai, Wang, Xinran, Liu, Kaihui, Wang, Xiaoyong, Wang, Jianpu, Wang, Lin, & Huang, Wei. Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals. United States. doi:10.1002/adma.201806562.
Sun, Yan, Zhou, Zishu, Huang, Zhen, Wu, Jiangbin, Zhou, Liujiang, Cheng, Yang, Liu, Jinqiu, Zhu, Chao, Yu, Maotao, Yu, Peng, Zhu, Wei, Liu, Yue, Zhou, Jian, Liu, Bowen, Xie, Hongguang, Cao, Yi, Li, Hai, Wang, Xinran, Liu, Kaihui, Wang, Xiaoyong, Wang, Jianpu, Wang, Lin, and Huang, Wei. Tue . "Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals". United States. doi:10.1002/adma.201806562.
@article{osti_1505975,
title = {Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals},
author = {Sun, Yan and Zhou, Zishu and Huang, Zhen and Wu, Jiangbin and Zhou, Liujiang and Cheng, Yang and Liu, Jinqiu and Zhu, Chao and Yu, Maotao and Yu, Peng and Zhu, Wei and Liu, Yue and Zhou, Jian and Liu, Bowen and Xie, Hongguang and Cao, Yi and Li, Hai and Wang, Xinran and Liu, Kaihui and Wang, Xiaoyong and Wang, Jianpu and Wang, Lin and Huang, Wei},
abstractNote = {To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Here in this paper, PbI2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI2-based interfacial semiconductors, PbI2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS2 is enhanced in MoS2/PbI2 stacks, while a dramatic photoluminescence quenching of WS2 and WSe2 is revealed in WS2/PbI2 and WSe2/PbI2 stacks. This is attributed to the effective heterojunction formation between PbI2 and these monolayers; type I band alignment in MoS2/PbI2 stacks, where fast-transferred charge carriers accumulate in MoS2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS2/PbI2 and WSe2/PbI2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS2, WS2, and WSe2 monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI2, providing unprecedented capabilities to engineer the device performance of 2D heterostructures.},
doi = {10.1002/adma.201806562},
journal = {Advanced Materials},
issn = {0935-9648},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {3}
}

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