Photoemission electron microscopy as a new tool to study the electronic properties of 2D crystals and inhomogeneous semiconductors.
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1505700
- Report Number(s):
- SAND2017-1638C; 654139
- Resource Relation:
- Journal Volume: 23; Journal Issue: S1; Conference: Proposed for presentation at the Microscopy & Microanalysis 2017 Meeting held August 6-10, 2017 in St Louis, Missouri.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoemission electron microscopy as a new tool to study the electronic properties of transition metal dichalcogenides and inhomogeneous semiconductors.
Photoemission electron microscopy as a new tool to study the electronic properties of an inhomogeneous semiconductor for photovoltaics.
Photoemission electron microscopy as a new tool to study the electronic properties of an inhomogeneous semiconductor for photovoltaics.
Conference
·
Sat Jul 01 00:00:00 EDT 2017
·
OSTI ID:1505700
Photoemission electron microscopy as a new tool to study the electronic properties of an inhomogeneous semiconductor for photovoltaics.
Conference
·
Thu Mar 01 00:00:00 EST 2018
·
OSTI ID:1505700
+3 more
Photoemission electron microscopy as a new tool to study the electronic properties of an inhomogeneous semiconductor for photovoltaics.
Conference
·
Mon Oct 01 00:00:00 EDT 2018
·
OSTI ID:1505700
+3 more