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Title: Topological nature of step-edge states on the surface of the topological crystalline insulator Pb 0.7 Sn 0.3 Se

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1505660
Grant/Contract Number:  
SC0014335
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 99 Journal Issue: 15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Iaia, Davide, Wang, Chang-Yan, Maximenko, Yulia, Walkup, Daniel, Sankar, R., Chou, Fangcheng, Lu, Yuan-Ming, and Madhavan, Vidya. Topological nature of step-edge states on the surface of the topological crystalline insulator Pb 0.7 Sn 0.3 Se. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.99.155116.
Iaia, Davide, Wang, Chang-Yan, Maximenko, Yulia, Walkup, Daniel, Sankar, R., Chou, Fangcheng, Lu, Yuan-Ming, & Madhavan, Vidya. Topological nature of step-edge states on the surface of the topological crystalline insulator Pb 0.7 Sn 0.3 Se. United States. doi:10.1103/PhysRevB.99.155116.
Iaia, Davide, Wang, Chang-Yan, Maximenko, Yulia, Walkup, Daniel, Sankar, R., Chou, Fangcheng, Lu, Yuan-Ming, and Madhavan, Vidya. Mon . "Topological nature of step-edge states on the surface of the topological crystalline insulator Pb 0.7 Sn 0.3 Se". United States. doi:10.1103/PhysRevB.99.155116.
@article{osti_1505660,
title = {Topological nature of step-edge states on the surface of the topological crystalline insulator Pb 0.7 Sn 0.3 Se},
author = {Iaia, Davide and Wang, Chang-Yan and Maximenko, Yulia and Walkup, Daniel and Sankar, R. and Chou, Fangcheng and Lu, Yuan-Ming and Madhavan, Vidya},
abstractNote = {},
doi = {10.1103/PhysRevB.99.155116},
journal = {Physical Review B},
issn = {2469-9950},
number = 15,
volume = 99,
place = {United States},
year = {2019},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on April 7, 2020
Publisher's Accepted Manuscript

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Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010


Topological crystalline insulators in the SnTe material class
journal, January 2012

  • Hsieh, Timothy H.; Lin, Hsin; Liu, Junwei
  • Nature Communications, Vol. 3, Article No. 982
  • DOI: 10.1038/ncomms1969