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Title: Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1505290
Report Number(s):
SAND2016-6553C
Journal ID: ISSN 0018--9499; 661824
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Journal Volume: 64; Journal Issue: 1; Conference: Proposed for presentation at the IEEE NSREC.
Country of Publication:
United States
Language:
English

Citation Formats

King, Michael Patrick, Wu, X., Eller, M., Samavedam, S., Shaneyfelt, Marty R., Silva, Antoinette Irene, Draper, Bruce L., Rice, William Charles, Meisenheimer, Timothy L., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. J., Alles, M. L., Kauppila, J. S., and Massengill, Lloyd W. Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.. United States: N. p., 2016. Web. doi:10.1109/TNS.2016.2634538.
King, Michael Patrick, Wu, X., Eller, M., Samavedam, S., Shaneyfelt, Marty R., Silva, Antoinette Irene, Draper, Bruce L., Rice, William Charles, Meisenheimer, Timothy L., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. J., Alles, M. L., Kauppila, J. S., & Massengill, Lloyd W. Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.. United States. doi:10.1109/TNS.2016.2634538.
King, Michael Patrick, Wu, X., Eller, M., Samavedam, S., Shaneyfelt, Marty R., Silva, Antoinette Irene, Draper, Bruce L., Rice, William Charles, Meisenheimer, Timothy L., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. J., Alles, M. L., Kauppila, J. S., and Massengill, Lloyd W. Fri . "Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.". United States. doi:10.1109/TNS.2016.2634538. https://www.osti.gov/servlets/purl/1505290.
@article{osti_1505290,
title = {Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.},
author = {King, Michael Patrick and Wu, X. and Eller, M. and Samavedam, S. and Shaneyfelt, Marty R. and Silva, Antoinette Irene and Draper, Bruce L. and Rice, William Charles and Meisenheimer, Timothy L. and Zhang, E. X. and Haeffner, T. D. and Ball, D. R. and Shetler, K. J. and Alles, M. L. and Kauppila, J. S. and Massengill, Lloyd W.},
abstractNote = {Abstract not provided.},
doi = {10.1109/TNS.2016.2634538},
journal = {},
issn = {0018--9499},
number = 1,
volume = 64,
place = {United States},
year = {2016},
month = {7}
}

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Works referencing / citing this record:

FCC-ee: The Lepton Collider: Future Circular Collider Conceptual Design Report Volume 2
journal, June 2019

  • Abada, A.; Abbrescia, M.; AbdusSalam, S. S.
  • The European Physical Journal Special Topics, Vol. 228, Issue 2
  • DOI: 10.1140/epjst/e2019-900045-4

FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3
journal, July 2019

  • Abada, A.; Abbrescia, M.; AbdusSalam, S. S.
  • The European Physical Journal Special Topics, Vol. 228, Issue 4
  • DOI: 10.1140/epjst/e2019-900087-0