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Title: Photoemission electron microscopy as a new tool to study the electronic properties of an inhomogeneous semiconductor for photovoltaics.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1505280
Report Number(s):
SAND2018-3254C
661843
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the MRS Spring Meeting held April 2-6, 2018 in Phoenix, AZ.
Country of Publication:
United States
Language:
English

Citation Formats

Ohta, Taisuke, Berg, Morgann, Chan, Calvin, Kephart, Jason M., Munshi, Amit, and Sampath, Walajabad S. Photoemission electron microscopy as a new tool to study the electronic properties of an inhomogeneous semiconductor for photovoltaics.. United States: N. p., 2018. Web.
Ohta, Taisuke, Berg, Morgann, Chan, Calvin, Kephart, Jason M., Munshi, Amit, & Sampath, Walajabad S. Photoemission electron microscopy as a new tool to study the electronic properties of an inhomogeneous semiconductor for photovoltaics.. United States.
Ohta, Taisuke, Berg, Morgann, Chan, Calvin, Kephart, Jason M., Munshi, Amit, and Sampath, Walajabad S. Thu . "Photoemission electron microscopy as a new tool to study the electronic properties of an inhomogeneous semiconductor for photovoltaics.". United States. https://www.osti.gov/servlets/purl/1505280.
@article{osti_1505280,
title = {Photoemission electron microscopy as a new tool to study the electronic properties of an inhomogeneous semiconductor for photovoltaics.},
author = {Ohta, Taisuke and Berg, Morgann and Chan, Calvin and Kephart, Jason M. and Munshi, Amit and Sampath, Walajabad S.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

Conference:
Other availability
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