Scanning microwave imaging of optically patterned Ge2Sb2Te5

Johnston, Scott R.; Ng, Edwin; Fong, Scott W.; Mok, Walter Y.; Park, Jeongwon; Zalden, Peter; Sakdinawat, Anne; Wong, H. -S. Philip; Mabuchi, Hideo; Shen, Zhi -Xun

doi:10.1063/1.5052018

Title: Scanning microwave imaging of optically patterned Ge₂Sb₂Te₅

Journal Article · Fri Mar 08 00:00:00 EST 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5052018· OSTI ID:1504493

^[1]; Ng, Edwin ^[1];

^[1]; Mok, Walter Y. ^[2];

^[3]; Zalden, Peter ^[4]; Sakdinawat, Anne ^[2]; Wong, H. -S. Philip ^[1]; Mabuchi, Hideo ^[1]; Shen, Zhi -Xun ^[1]

Stanford Univ., Stanford, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Ottawa, Ottawa, ON (Canada)
SLAC National Accelerator Lab., Menlo Park, CA (United States); European XFEL, Schenefeld (Germany)

The measurement of inhomogeneous conductivity in optically crystallized, amorphous Ge₂Sb₂Te₅ (GST) films is demonstrated via scanning microwave impedance microscopy (MIM). Qualitative consistency with expectations is demonstrated in spots crystallized by focused coherent light at various intensities, exposure times, and film thicknesses. The characterization of process imperfections is demonstrated when a mask is used to optically pattern the nanoscale features of crystalline GST in the amorphous film. In conclusion, these measurements show the ability of MIM to resolve partial crystallization, patterning faults, and other details in optically patterned GST.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515; DMR1305731; GBMF4536

OSTI ID:: 1504493

Journal Information:: Applied Physics Letters, Vol. 114, Issue 9; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 3 works

Citation information provided by
Web of Science

References (32)

Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM Baek, Kyungjoon; Song, Kyung; Son, Sung Kyu NPG Asia Materials, Vol. 7, Issue 6 https://doi.org/10.1038/am.2015.49	journal	June 2015
Characterization of phase change memory materials using phase change bridge devices Krebs, Daniel; Raoux, Simone; Rettner, Charles T. Journal of Applied Physics, Vol. 106, Issue 5 https://doi.org/10.1063/1.3183952	journal	September 2009
Reversible optical switching of highly confined phonon–polaritons with an ultrathin phase-change material Li, Peining; Yang, Xiaosheng; Maß, Tobias W. W. Nature Materials, Vol. 15, Issue 8 https://doi.org/10.1038/nmat4649	journal	May 2016
Electronic, optical and thermal properties of the hexagonal and rocksalt-like Ge ₂ Sb ₂ Te ₅ chalcogenide from first-principle calculations Tsafack, Thierry; Piccinini, Enrico; Lee, Bong-Sub Journal of Applied Physics, Vol. 110, Issue 6 https://doi.org/10.1063/1.3639279	journal	September 2011
Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory Celano, Umberto; Goux, Ludovic; Degraeve, Robin Nano Letters, Vol. 15, Issue 12 https://doi.org/10.1021/acs.nanolett.5b03078	journal	November 2015
Laser induced crystallization of amorphous Ge2Sb2Te5 films Weidenhof, V.; Friedrich, I.; Ziegler, S. Journal of Applied Physics, Vol. 89, Issue 6 https://doi.org/10.1063/1.1351868	journal	March 2001
Density changes upon crystallization of Ge2Sb2.04Te4.74 films Njoroge, Walter K.; Wöltgens, Han-Willem; Wuttig, Matthias Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, Issue 1 https://doi.org/10.1116/1.1430249	journal	January 2002
Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials Raoux, Simone; Rettner, Charles T.; Jordan-Sweet, Jean L. Journal of Applied Physics, Vol. 102, Issue 9 https://doi.org/10.1063/1.2801000	journal	November 2007
Thermal conductivity of phase-change material Ge2Sb2Te5 Lyeo, Ho-Ki; Cahill, David G.; Lee, Bong-Sub Applied Physics Letters, Vol. 89, Issue 15 https://doi.org/10.1063/1.2359354	journal	October 2006
Dielectric properties of amorphous phase-change materials Chen, C.; Jost, P.; Volker, H. Physical Review B, Vol. 95, Issue 9 https://doi.org/10.1103/PhysRevB.95.094111	journal	March 2017
Measurement of crystal growth velocity in a melt-quenched phase-change material Salinga, Martin; Carria, Egidio; Kaldenbach, Andreas Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3371	journal	August 2013
Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging Yang, Yongliang; Lai, Keji; Tang, Qiaochu Journal of Micromechanics and Microengineering, Vol. 22, Issue 11 https://doi.org/10.1088/0960-1317/22/11/115040	journal	October 2012
Phase change materials and phase change memory Raoux, Simone; Xiong, Feng; Wuttig, Matthias MRS Bulletin, Vol. 39, Issue 8 https://doi.org/10.1557/mrs.2014.139	journal	August 2014
Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials Zalden, Peter; Shu, Michael J.; Chen, Frank Physical Review Letters, Vol. 117, Issue 6 https://doi.org/10.1103/PhysRevLett.117.067601	journal	August 2016
How Supercooled Liquid Phase-Change Materials Crystallize: Snapshots after Femtosecond Optical Excitation Zalden, Peter; von Hoegen, Alexander; Landreman, Patrick Chemistry of Materials, Vol. 27, Issue 16 https://doi.org/10.1021/acs.chemmater.5b02011	journal	August 2015
Nanoscale Electronic Inhomogeneity in In ₂ Se ₃ Nanoribbons Revealed by Microwave Impedance Microscopy Lai, Keji; Peng, Hailin; Kundhikanjana, Worasom Nano Letters, Vol. 9, Issue 3 https://doi.org/10.1021/nl900222j	journal	March 2009
Nanoscale microwave microscopy using shielded cantilever probes Lai, Keji; Kundhikanjana, Worasom; Kelly, Michael A. Applied Nanoscience, Vol. 1, Issue 1 https://doi.org/10.1007/s13204-011-0002-7	journal	April 2011
Material Requirements for Reversible Phase Change Optical Recording Rubin, Kurt A. MRS Proceedings, Vol. 230 https://doi.org/10.1557/PROC-230-239	journal	January 1991
Spatially Resolved Thermometry of Resistive Memory Devices Yalon, Eilam; Deshmukh, Sanchit; Muñoz Rojo, Miguel Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-14498-3	journal	November 2017
Phase Change Memory Wong, H. -S. Philip; Raoux, Simone; Kim, SangBum Proceedings of the IEEE, Vol. 98, Issue 12 https://doi.org/10.1109/JPROC.2010.2070050	journal	December 2010
Imaging of phase change materials below a capping layer using correlative infrared near-field microscopy and electron microscopy Lewin, M.; Hauer, B.; Bornhöfft, M. Applied Physics Letters, Vol. 107, Issue 15 https://doi.org/10.1063/1.4933102	journal	October 2015
Microscopic studies of fast phase transformations in GeSbTe films Detemple, Ralf; Friedrich, Inés; Njoroge, Walter MRS Proceedings, Vol. 674 https://doi.org/10.1557/PROC-674-V1.8	journal	January 2001
Color Depth Modulation and Resolution in Phase-Change Material Nanodisplays Ríos, Carlos; Hosseini, Peiman; Taylor, Robert A. Advanced Materials, Vol. 28, Issue 23 https://doi.org/10.1002/adma.201506238	journal	March 2016
Compound materials for reversible, phase‐change optical data storage Chen, M.; Rubin, K. A.; Barton, R. W. Applied Physics Letters, Vol. 49, Issue 9 https://doi.org/10.1063/1.97617	journal	September 1986
Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application Lazarenko, P. I.; Sherchenkov, A. A.; Kozyukhin, S. A. REVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION: Proceedings of the 35th Annual Review of Progress in Quantitative Nondestructive Evaluation, AIP Conference Proceedings https://doi.org/10.1063/1.4945968	conference	January 2016
Impact of Oxidation on Ge ₂ Sb ₂ Te ₅ and GeTe Phase-Change Properties Gourvest, E.; Pelissier, B.; Vallée, C. Journal of The Electrochemical Society, Vol. 159, Issue 4 https://doi.org/10.1149/2.027204jes	journal	January 2012
Phase-change materials for non-volatile photonic applications Wuttig, M.; Bhaskaran, H.; Taubner, T. Nature Photonics, Vol. 11, Issue 8 https://doi.org/10.1038/nphoton.2017.126	journal	August 2017
Optical properties of pseudobinary GeTe, ${Ge}_{2} {Sb}_{2} {Te}_{5}$ , ${GeSb}_{2} {Te}_{4}$ , ${GeSb}_{4} {Te}_{7}$ , and ${Sb}_{2} {Te}_{3}$ from ellipsometry and density functional theory Park, Jun-Woo; Eom, Seung Hwan; Lee, Hosun Physical Review B, Vol. 80, Issue 11 https://doi.org/10.1103/PhysRevB.80.115209	journal	September 2009
Dielectric properties of amorphous phase-change materials Chen, C.; Jost, Peter Christian Georg; Volker, H. RWTH Aachen University https://doi.org/10.18154/rwth-2017-03888	text	January 2017
Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy Lai, Keji; Peng, Hailin; Kundhikanjana, Worasom arXiv https://doi.org/10.48550/arxiv.0902.2255	text	January 2009
Picosecond electric-field-induced threshold switching in phase-change materials Zalden, Peter; Shu, Michael J.; Chen, Frank arXiv https://doi.org/10.48550/arxiv.1602.01885	text	January 2016
Spatially Resolved Thermometry of Resistive Memory Devices Yalon, Eilam; Deshmukh, Sanchit; Rojo, Miguel Muñoz arXiv https://doi.org/10.48550/arxiv.1706.02318	preprint	January 2017

Similar Records

Laser-induced patterning for a diffraction grating using the phase change material of Ge ₂ Sb ₂ Te ₅ (GST) as a spatial light modulator in X-ray optics: a proof of concept

Journal Article · Wed Mar 09 00:00:00 EST 2022 · Optical Materials Express · OSTI ID:1504493

Park, Jeongwon; Zalden, Peter; Ng, Edwin; +11 more

Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge{sub 2+x}Sb{sub 2}Te{sub 5} (x = 0,1) thin films for phase-change memory

Journal Article · Mon Jan 28 00:00:00 EST 2013 · Journal of Applied Physics · OSTI ID:1504493

Limin, Cheng; Liangcai, Wu; Zhitang, Song; +5 more

Coherent phonon modes of crystalline and amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} thin films: A fingerprint of structure and bonding

Journal Article · Wed Jan 14 00:00:00 EST 2015 · Journal of Applied Physics · OSTI ID:1504493

Shalini, A.; Liu, Y.; Srivastava, G. P.; +3 more

Related Subjects

36 MATERIALS SCIENCE

Title: Scanning microwave imaging of optically patterned Ge2Sb2Te5

Citation Formats

References (32)

Similar Records

Related Subjects

Title: Scanning microwave imaging of optically patterned Ge₂Sb₂Te₅