Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries

MacLaren, I.; Sala, B.; Andersson, S. M. L.; Pennycook, T. J.; Xiong, J.; Jia, Q. X.; Choi, E-M; MacManus-Driscoll, J. L.

doi:10.1186/s11671-015-1116-8

Title: Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries

Journal Article · Sat Oct 17 00:00:00 EDT 2015 · Nanoscale Research Letters

DOI:https://doi.org/10.1186/s11671-015-1116-8· OSTI ID:1503034

MacLaren, I.; Sala, B.; Andersson, S. M. L.; Pennycook, T. J.; Xiong, J.; Jia, Q. X.; Choi, E-M; MacManus-Driscoll, J. L.

Here, the atomic structure and chemistry of thin films of Bi(Fe,Mn)O₃ (BFMO) films with a target composition of Bi₂FeMnO₆ on SrTiO₃ are studied using scanning transmission electron microscopy imaging and electron energy loss spectroscopy. It is shown that Mn4+-rich antiphase boundaries are locally nucleated right at the film substrate and then form stepped structures that are approximately pyramidal in three dimensions. These have the effect of confining the material below the pyramids in a highly strained state with an out-of-plane lattice parameter close to 4.1 Å. Outside the area enclosed by the antiphase boundaries, the out-of-plane lattice parameter is much closer to bulk values for BFMO. This suggests that to improve the crystallographic perfection of the films whilst retaining the strain state through as much of the film as possible, ways need to be found to prevent nucleation of the antiphase boundaries. Since the antiphase boundaries seem to form from the interaction of Mn with the Ti in the substrate, one route to perform this would be to grow a thin buffer layer of pure BiFeO₃ on the SrTiO₃ substrate to minimise any Mn-Ti interactions.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: LDRD program; AC52-06NA25396

OSTI ID:: 1503034

Alternate ID(s):: OSTI ID: 1329687

Report Number(s):: LA-UR-15-23680; 407; PII: 1116

Journal Information:: Nanoscale Research Letters, Journal Name: Nanoscale Research Letters Vol. 10 Journal Issue: 1; ISSN 1931-7573

Publisher:: Springer Science + Business MediaCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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Cited By (2)

Engineering antiphase boundaries in epitaxial SrTiO ₃ to achieve forming free memristive devices Hensling, Felix V. E.; Du, Hongchu; Raab, Nicolas APL Materials, Vol. 7, Issue 10 https://doi.org/10.1063/1.5125211	journal	October 2019
High-temperature Magnetodielectric $Bi ({Fe}_{0.5} {Mn}_{0.5}) O_{3}$ Thin Films with Checkerboard-Ordered Oxygen Vacancies and Low Magnetic Damping Coy, E.; Fina, I.; Załęski, K. Physical Review Applied, Vol. 10, Issue 5 https://doi.org/10.1103/physrevapplied.10.054072	journal	November 2018

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36 MATERIALS SCIENCE
material science
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interfaces
magnetic
bismuth ferrite
scanning transmission electron microscopy (STEM)
strain
multiferroic
antiphase boundaries

Title: Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries

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