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Title: Radiation damage studies for the D0 silicon detector

Abstract

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10{sup 14} p/cm{sup 2} at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling.

Authors:
;
Publication Date:
Research Org.:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
15017032
Report Number(s):
FERMILAB-CONF-04-433-E
TRN: US0605271
DOE Contract Number:  
AC02-76CH03000
Resource Type:
Conference
Resource Relation:
Journal Name: Nucl.Instrum.Meth.A530:105-109,2004; Conference: Prepared for 6th International Conference on Large Scale Applications and Radiation hardness of Semiconductor Detectors, Florence, Italy, 29 Sep - 1 Oct 2003
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CALIBRATION; HARDNESS; IRRADIATION; KANSAS; LIFETIME; PRODUCTION; PROTONS; RADIATIONS; SEMICONDUCTOR DETECTORS; SILICON; Instrumentation

Citation Formats

Lehner, F., and /Zurich U. Radiation damage studies for the D0 silicon detector. United States: N. p., 2004. Web.
Lehner, F., & /Zurich U. Radiation damage studies for the D0 silicon detector. United States.
Lehner, F., and /Zurich U. Thu . "Radiation damage studies for the D0 silicon detector". United States. https://www.osti.gov/servlets/purl/15017032.
@article{osti_15017032,
title = {Radiation damage studies for the D0 silicon detector},
author = {Lehner, F. and /Zurich U.},
abstractNote = {We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10{sup 14} p/cm{sup 2} at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling.},
doi = {},
journal = {Nucl.Instrum.Meth.A530:105-109,2004},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2004},
month = {Thu Jan 01 00:00:00 EST 2004}
}

Conference:
Other availability
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