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Title: High-Throughput Approaches to Optimization of Crystal Silicon Surface Passivation and Heterojunction Solar Cells

Conference ·

We use a high-throughput (combinatorial) hot-wire chemical vapor deposition system to passivate the crystal silicon surface and to grow heterojunction silicon solar cells. We study the effectiveness of crystal surface treatments by atomic H or/and NHx radicals, followed by the growth of thin hydrogenated amorphous silicon (a Si:H) films. Treatment and layer properties such as times, thicknesses, and gas mixtures can be continuously graded, creating a two-dimensional sample with each variable varying in one direction. This results in high-throughput optimization of the processes. Effective carrier lifetime is measured by photoconductive decay to evaluate the effectiveness of the surface passivation by surface treatments. The effective carrier lifetime increases from about 5 {micro}s without passivation to about 24 {micro}s with an optimized surface treatment and thickness a-Si:H on single-sided c-Si. Transmission electron microscopy reveals that a-Si:H, a mixed phase, or epitaxial growth of thin-film Si depending on the surface treatment. Improvement in effective carrier lifetime correlates with an immediate a-Si:H growth on c-Si, rather than a mixed phase and epitaxial Si growth. We have obtained an efficiency of 13.4% on a non-textured single-sided heterojunction solar cell on p-type CZ-Si processed with optimized surface treatment.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
15016491
Report Number(s):
NREL/CP-520-37439; TRN: US200513%%529
Resource Relation:
Conference: Prepared for the 31st IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 01/03/2005--01/07/2005; Other Information: PBD: 1 Feb 2005
Country of Publication:
United States
Language:
English