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Title: Spontaneous Hall effects in the electron system at the SmTiO 3/EuTiO 3 interface

Abstract

Magnetotransport and magnetism of epitaxial SmTiO 3/EuTiO 3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ~3.9 × 10 14 cm -2 carriers into the EuTiO 3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure, and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO 3. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.

Authors:
 [1];  [1];  [1]
  1. Univ. of California, Santa Barbara, CA (United States). Materials Dept.
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
OSTI Identifier:
1501551
Alternate Identifier(s):
OSTI ID: 1435990
Grant/Contract Number:  
FG02-02ER45994; ECCS 1740213; DMR 1720256
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 5; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; epitaxy; geometric phases; heterostructures; oxides; magnetic ordering; electronic transport; Hall effect; transition metal oxides

Citation Formats

Ahadi, Kaveh, Kim, Honggyu, and Stemmer, Susanne. Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface. United States: N. p., 2018. Web. doi:10.1063/1.5025169.
Ahadi, Kaveh, Kim, Honggyu, & Stemmer, Susanne. Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface. United States. doi:10.1063/1.5025169.
Ahadi, Kaveh, Kim, Honggyu, and Stemmer, Susanne. Fri . "Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface". United States. doi:10.1063/1.5025169. https://www.osti.gov/servlets/purl/1501551.
@article{osti_1501551,
title = {Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface},
author = {Ahadi, Kaveh and Kim, Honggyu and Stemmer, Susanne},
abstractNote = {Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ~3.9 × 1014 cm-2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure, and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO3. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.},
doi = {10.1063/1.5025169},
journal = {APL Materials},
issn = {2166-532X},
number = 5,
volume = 6,
place = {United States},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 2 works
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