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Title: Effect of thermal annealing and chemical treatments on secondary electron emission properties of atomic layer deposited MgO

Abstract

This study reports on the secondary electron emission (SEE) performance of atomic layer deposited MgO films, with thicknesses in the range from 5 to 25 nm, for the application in the Timed Photon Counter. In this novel, photodetector MgO is utilized as a material for the fabrication of ultrathin transmission dynodes (tynodes). Two different types of PECVD silicon oxide films are applied on top of MgO, in order to protect it against etching steps in the fabrication of tynodes and also as a prevention against aging. Applicability of these two materials as capping films is evaluated in terms of achieved secondary electron yield (SEY) of MgO after their removal. Emission of secondary electrons is known to depend on numerous physical and chemical properties of the material, such as surface roughness and chemical composition. On that account, morphological and structural properties of modified MgO are determined by atomic force microscope and x-ray photoelectron spectrometer and linked to the changes in SEE behavior. The authors demonstrate that the application of a suitable capping layer followed by its removal provides an SEY of 6.6, as opposed to the value of 4.8 recorded from the as-deposited MgO film. Furthermore, in a following experiment, theymore » showed that annealing of MgO films at high temperatures (up to 1100 °C) significantly improved the secondary electron emission, elevating the SEY to 7.2.« less

Authors:
 [1];  [1];  [2];  [2];  [3];  [3];  [4];  [5]
  1. Electronic Components, Technology and Materials (ECTM), Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands; National Institute for Subatomic Physics (Nikhef), Science Park 105, 1098 XG Amsterdam, The Netherlands
  2. Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439
  3. Department of Solid-State Physics, Ghent University, 9000 Ghent, Belgium
  4. National Institute for Subatomic Physics (Nikhef), Science Park 105, 1098 XG Amsterdam, The Netherlands
  5. Electronic Components, Technology and Materials (ECTM), Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
European Research Council (ERC) - Advanced Grants
OSTI Identifier:
1501462
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 36; Journal Issue: 6; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English
Subject:
ALD; MgO; SEE

Citation Formats

Prodanovic´, Violeta, Chan, Hong Wah, Mane, Anil U., Elam, Jeffrey W., Minjauw, Matthias M., Detavernier, Christophe, van der Graaf, Harry, and Sarro, Pasqualina M. Effect of thermal annealing and chemical treatments on secondary electron emission properties of atomic layer deposited MgO. United States: N. p., 2018. Web. doi:10.1116/1.5040813.
Prodanovic´, Violeta, Chan, Hong Wah, Mane, Anil U., Elam, Jeffrey W., Minjauw, Matthias M., Detavernier, Christophe, van der Graaf, Harry, & Sarro, Pasqualina M. Effect of thermal annealing and chemical treatments on secondary electron emission properties of atomic layer deposited MgO. United States. doi:10.1116/1.5040813.
Prodanovic´, Violeta, Chan, Hong Wah, Mane, Anil U., Elam, Jeffrey W., Minjauw, Matthias M., Detavernier, Christophe, van der Graaf, Harry, and Sarro, Pasqualina M. Thu . "Effect of thermal annealing and chemical treatments on secondary electron emission properties of atomic layer deposited MgO". United States. doi:10.1116/1.5040813.
@article{osti_1501462,
title = {Effect of thermal annealing and chemical treatments on secondary electron emission properties of atomic layer deposited MgO},
author = {Prodanovic´, Violeta and Chan, Hong Wah and Mane, Anil U. and Elam, Jeffrey W. and Minjauw, Matthias M. and Detavernier, Christophe and van der Graaf, Harry and Sarro, Pasqualina M.},
abstractNote = {This study reports on the secondary electron emission (SEE) performance of atomic layer deposited MgO films, with thicknesses in the range from 5 to 25 nm, for the application in the Timed Photon Counter. In this novel, photodetector MgO is utilized as a material for the fabrication of ultrathin transmission dynodes (tynodes). Two different types of PECVD silicon oxide films are applied on top of MgO, in order to protect it against etching steps in the fabrication of tynodes and also as a prevention against aging. Applicability of these two materials as capping films is evaluated in terms of achieved secondary electron yield (SEY) of MgO after their removal. Emission of secondary electrons is known to depend on numerous physical and chemical properties of the material, such as surface roughness and chemical composition. On that account, morphological and structural properties of modified MgO are determined by atomic force microscope and x-ray photoelectron spectrometer and linked to the changes in SEE behavior. The authors demonstrate that the application of a suitable capping layer followed by its removal provides an SEY of 6.6, as opposed to the value of 4.8 recorded from the as-deposited MgO film. Furthermore, in a following experiment, they showed that annealing of MgO films at high temperatures (up to 1100 °C) significantly improved the secondary electron emission, elevating the SEY to 7.2.},
doi = {10.1116/1.5040813},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 6,
volume = 36,
place = {United States},
year = {2018},
month = {11}
}