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Title: High Efficiency Narrow Gap and Tandem Junction Devices: Final Technical Report, 1 May 2002--31 October 2004

Abstract

The work described in this report uses a modified pulsed plasma-enhanced chemical vapor deposition (PECVD) technique that has been successfully developed to fabricate state-of-the-art nc-Si materials and devices. Specifically, we have achieved the following benchmarks: nc SiH device with an efficiency of 8% achieved at a deposition rate of {approx}1 A/s; nc SiH device with an efficiency of 7% achieved at a deposition rate of {approx}5 A/s; large-area technology developed using pulsed PECVD with uniformity of +/-5% over 25 cm x 35 cm; devices have been fabricated in the large-area system (part of Phase 3); an innovative stable four-terminal (4-T) tandem-junction device of h> 9% fabricated. (Note that the 4-T device was fabricated with existing technology base and with further development can reach stabilized h of 12%); and with improvement in Voc {approx} 650 mV, from the current value of 480 mV can lead to stable 4-T device with h>16%. Toward this objective, modified pulsed PECVD was developed where layer- by-layer modification of nc-SiH has been achieved. (Note that due to budget cuts at NREL, this project was curtailed by about one year.)

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
15011482
Report Number(s):
NREL/SR-520-37718
ZDJ-2-30630-31; TRN: US200507%%328
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 1 Mar 2005; Related Information: Work performed by MVSystems, Inc., Golden, Colorado
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; BENCHMARKS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; EFFICIENCY; MODIFICATIONS; ORGANIC COMPOUNDS; VOLATILE MATTER; PV; MODULE; SOLAR CELLS; MANUFACTURER; DEVICE; NANO-CRYSTALLINE SILICON (NC-SI); CONTINUOUS WAVE (CW); QUANTUM EFFICIENCY (QE); TANDEM JUNCTIONS; LARGE AREA; SOLAR ENERGY - PHOTOVOLTAICS

Citation Formats

Madan, A. High Efficiency Narrow Gap and Tandem Junction Devices: Final Technical Report, 1 May 2002--31 October 2004. United States: N. p., 2005. Web. doi:10.2172/15011482.
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Madan, A. High Efficiency Narrow Gap and Tandem Junction Devices: Final Technical Report, 1 May 2002--31 October 2004. United States. doi:10.2172/15011482.
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Madan, A. Tue . "High Efficiency Narrow Gap and Tandem Junction Devices: Final Technical Report, 1 May 2002--31 October 2004". United States. doi:10.2172/15011482. https://www.osti.gov/servlets/purl/15011482.
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@article{osti_15011482,
title = {High Efficiency Narrow Gap and Tandem Junction Devices: Final Technical Report, 1 May 2002--31 October 2004},
author = {Madan, A},
abstractNote = {The work described in this report uses a modified pulsed plasma-enhanced chemical vapor deposition (PECVD) technique that has been successfully developed to fabricate state-of-the-art nc-Si materials and devices. Specifically, we have achieved the following benchmarks: nc SiH device with an efficiency of 8% achieved at a deposition rate of {approx}1 A/s; nc SiH device with an efficiency of 7% achieved at a deposition rate of {approx}5 A/s; large-area technology developed using pulsed PECVD with uniformity of +/-5% over 25 cm x 35 cm; devices have been fabricated in the large-area system (part of Phase 3); an innovative stable four-terminal (4-T) tandem-junction device of h> 9% fabricated. (Note that the 4-T device was fabricated with existing technology base and with further development can reach stabilized h of 12%); and with improvement in Voc {approx} 650 mV, from the current value of 480 mV can lead to stable 4-T device with h>16%. Toward this objective, modified pulsed PECVD was developed where layer- by-layer modification of nc-SiH has been achieved. (Note that due to budget cuts at NREL, this project was curtailed by about one year.)},
doi = {10.2172/15011482},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 01 00:00:00 EST 2005},
month = {Tue Mar 01 00:00:00 EST 2005}
}
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Technical Report:
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DOI:  10.2172/15011482
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