Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004

Li, Y M

doi:10.2172/15011469

Title: Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004

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Abstract

The key objective of this subcontract was to take the first steps to extend the radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) manufacturing technology of Energy Photovoltaics, Inc. (EPV), to the promising field of a-Si/nc-Si solar cell fabrication by demonstrating ''proof-of-concept'' devices of good efficiencies that previously were believed to be unobtainable in single-chamber reactors owing to contamination problems. A complementary goal was to find a new high-rate deposition method that can conceivably be deployed in large PECVD-type reactors. We emphasize that our goal was not to produce 'champion' devices of near-record efficiencies, but rather, to achieve modestly high efficiencies using a far simpler (cheaper) system, via practical processing methods and materials. To directly attack issues in solar-cell fabrication at EPV, the nc-Si thin films were studied almost exclusively in the p-i-n device configuration (as absorbers or i-layers), not as stand-alone films. Highly efficient, p-i-n type, nc-Si-based solar cells are generally grown on expensive, laboratory superstrates, such as custom ZnO/glass of high texture (granular surface) and low absorption. Also standard was the use of a highly effective back-reflector ZnO/Ag, where the ZnO can be surface-textured for efficient diffuse reflection. The high-efficiency ''champion'' devices made by the PECVD methods were invariably preparedmore »« less

Authors:: Li, Y M

Publication Date:: Wed Dec 01 00:00:00 EST 2004

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: US Department of Energy (US)

OSTI Identifier:: 15011469

Report Number(s):: NREL/SR-520-37195
ZDJ-2-30630-28; TRN: US200507%%241

DOE Contract Number:: AC36-99-GO10337

Resource Type:: Technical Report

Resource Relation:: Other Information: PBD: 1 Dec 2004; Related Information: Work performed by Energy Photovoltaics, Inc., Princeton, New Jersey

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ABSORPTION; CHEMICAL VAPOR DEPOSITION; CONFIGURATION; CONTAMINATION; DEPOSITION; EFFICIENCY; ELECTRODES; FABRICATION; MANUFACTURING; REFLECTION; SOLAR CELLS; SUBSTRATES; SURFACE AREA; TEXTURE; THIN FILMS; PV; THIN FILM; MODULE; CRYSTALLINE; MANUFACTURER; MICROCRYSTALLINE SILICON (MC-SI); SEEDING PROCEDURE; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); AMORPHOUS; INFRARED PHOTOCURRENT SPECTROSCOPY; IMPURITY; SCANNING ELECTRON SPECTROSCOPY (SEM); TANDEM; RADIO-FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RF-PECVD); SOLAR ENERGY - PHOTOVOLTAICS

Citation Formats


                    Li, Y M. Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004.  United States: N. p., 2004. 
        Web.  doi:10.2172/15011469.

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                    Li, Y M. Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004.  United States.  https://doi.org/10.2172/15011469

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                    Li, Y M. 2004.  
        "Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004".  United States.  https://doi.org/10.2172/15011469.  https://www.osti.gov/servlets/purl/15011469.

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@article{osti_15011469,

  title        = {Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004},

  author       = {Li, Y M},

  abstractNote = {The key objective of this subcontract was to take the first steps to extend the radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) manufacturing technology of Energy Photovoltaics, Inc. (EPV), to the promising field of a-Si/nc-Si solar cell fabrication by demonstrating ''proof-of-concept'' devices of good efficiencies that previously were believed to be unobtainable in single-chamber reactors owing to contamination problems. A complementary goal was to find a new high-rate deposition method that can conceivably be deployed in large PECVD-type reactors. We emphasize that our goal was not to produce 'champion' devices of near-record efficiencies, but rather, to achieve modestly high efficiencies using a far simpler (cheaper) system, via practical processing methods and materials. To directly attack issues in solar-cell fabrication at EPV, the nc-Si thin films were studied almost exclusively in the p-i-n device configuration (as absorbers or i-layers), not as stand-alone films. Highly efficient, p-i-n type, nc-Si-based solar cells are generally grown on expensive, laboratory superstrates, such as custom ZnO/glass of high texture (granular surface) and low absorption. Also standard was the use of a highly effective back-reflector ZnO/Ag, where the ZnO can be surface-textured for efficient diffuse reflection. The high-efficiency ''champion'' devices made by the PECVD methods were invariably prepared in sophisticated (i.e., expensive), multi-chamber, or at least load-locked deposition systems. The electrode utilization efficiency, defined as the surface-area ratio of the powered electrode to that of the substrates, was typically low at about one (1:1). To evaluate the true potential of nc-Si absorbers for cost-competitive, commercially viable manufacturing of large-area PV modules, we took a more down-to-earth approach, based on our proven production of a-Si PV modules by a massively parallel batch process in single-chamber RF-PECVD systems, to the study of nc-Si solar cells, with the aim of producing high-efficiency a-Si/nc-Si solar cells and sub-modules.},

  doi          = {10.2172/15011469},

  url          = {https://www.osti.gov/biblio/15011469},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Wed Dec 01 00:00:00 EST 2004},

  month        = {Wed Dec 01 00:00:00 EST 2004}

}

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