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Title: Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004

Abstract

The key objective of this subcontract was to take the first steps to extend the radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) manufacturing technology of Energy Photovoltaics, Inc. (EPV), to the promising field of a-Si/nc-Si solar cell fabrication by demonstrating ''proof-of-concept'' devices of good efficiencies that previously were believed to be unobtainable in single-chamber reactors owing to contamination problems. A complementary goal was to find a new high-rate deposition method that can conceivably be deployed in large PECVD-type reactors. We emphasize that our goal was not to produce 'champion' devices of near-record efficiencies, but rather, to achieve modestly high efficiencies using a far simpler (cheaper) system, via practical processing methods and materials. To directly attack issues in solar-cell fabrication at EPV, the nc-Si thin films were studied almost exclusively in the p-i-n device configuration (as absorbers or i-layers), not as stand-alone films. Highly efficient, p-i-n type, nc-Si-based solar cells are generally grown on expensive, laboratory superstrates, such as custom ZnO/glass of high texture (granular surface) and low absorption. Also standard was the use of a highly effective back-reflector ZnO/Ag, where the ZnO can be surface-textured for efficient diffuse reflection. The high-efficiency ''champion'' devices made by the PECVD methods were invariably preparedmore » in sophisticated (i.e., expensive), multi-chamber, or at least load-locked deposition systems. The electrode utilization efficiency, defined as the surface-area ratio of the powered electrode to that of the substrates, was typically low at about one (1:1). To evaluate the true potential of nc-Si absorbers for cost-competitive, commercially viable manufacturing of large-area PV modules, we took a more down-to-earth approach, based on our proven production of a-Si PV modules by a massively parallel batch process in single-chamber RF-PECVD systems, to the study of nc-Si solar cells, with the aim of producing high-efficiency a-Si/nc-Si solar cells and sub-modules.« less

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
15011469
Report Number(s):
NREL/SR-520-37195
ZDJ-2-30630-28; TRN: US200507%%241
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 1 Dec 2004; Related Information: Work performed by Energy Photovoltaics, Inc., Princeton, New Jersey
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ABSORPTION; CHEMICAL VAPOR DEPOSITION; CONFIGURATION; CONTAMINATION; DEPOSITION; EFFICIENCY; ELECTRODES; FABRICATION; MANUFACTURING; REFLECTION; SOLAR CELLS; SUBSTRATES; SURFACE AREA; TEXTURE; THIN FILMS; PV; THIN FILM; MODULE; CRYSTALLINE; MANUFACTURER; MICROCRYSTALLINE SILICON (MC-SI); SEEDING PROCEDURE; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); AMORPHOUS; INFRARED PHOTOCURRENT SPECTROSCOPY; IMPURITY; SCANNING ELECTRON SPECTROSCOPY (SEM); TANDEM; RADIO-FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RF-PECVD); SOLAR ENERGY - PHOTOVOLTAICS

Citation Formats

Li, Y M. Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004. United States: N. p., 2004. Web. doi:10.2172/15011469.
Li, Y M. Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004. United States. https://doi.org/10.2172/15011469
Li, Y M. Wed . "Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004". United States. https://doi.org/10.2172/15011469. https://www.osti.gov/servlets/purl/15011469.
@article{osti_15011469,
title = {Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004},
author = {Li, Y M},
abstractNote = {The key objective of this subcontract was to take the first steps to extend the radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) manufacturing technology of Energy Photovoltaics, Inc. (EPV), to the promising field of a-Si/nc-Si solar cell fabrication by demonstrating ''proof-of-concept'' devices of good efficiencies that previously were believed to be unobtainable in single-chamber reactors owing to contamination problems. A complementary goal was to find a new high-rate deposition method that can conceivably be deployed in large PECVD-type reactors. We emphasize that our goal was not to produce 'champion' devices of near-record efficiencies, but rather, to achieve modestly high efficiencies using a far simpler (cheaper) system, via practical processing methods and materials. To directly attack issues in solar-cell fabrication at EPV, the nc-Si thin films were studied almost exclusively in the p-i-n device configuration (as absorbers or i-layers), not as stand-alone films. Highly efficient, p-i-n type, nc-Si-based solar cells are generally grown on expensive, laboratory superstrates, such as custom ZnO/glass of high texture (granular surface) and low absorption. Also standard was the use of a highly effective back-reflector ZnO/Ag, where the ZnO can be surface-textured for efficient diffuse reflection. The high-efficiency ''champion'' devices made by the PECVD methods were invariably prepared in sophisticated (i.e., expensive), multi-chamber, or at least load-locked deposition systems. The electrode utilization efficiency, defined as the surface-area ratio of the powered electrode to that of the substrates, was typically low at about one (1:1). To evaluate the true potential of nc-Si absorbers for cost-competitive, commercially viable manufacturing of large-area PV modules, we took a more down-to-earth approach, based on our proven production of a-Si PV modules by a massively parallel batch process in single-chamber RF-PECVD systems, to the study of nc-Si solar cells, with the aim of producing high-efficiency a-Si/nc-Si solar cells and sub-modules.},
doi = {10.2172/15011469},
url = {https://www.osti.gov/biblio/15011469}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {12}
}