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Title: Experimental Determination of Valence Band Maxima for SrTiO3, TiO2, and SrO and the Associated Valence Band Offsets with Si(001)

Journal Article · · Journal of Vacuum Science and Technology B--Microelectronics and Nanometer Structures, 22(4):2205-2215
DOI:https://doi.org/10.1116/1.1768525· OSTI ID:15010002

Abstract We address the issue of accurate determination of the energy at the top of the valence band for SrTiO₃(001) single crystals, as well as TiO₂(001) anatase and SrO epitaxial films. These measurements are of critical importance in determining valence band offsets for oxides in heterojunctions involving these materials. Three different methods are presented and compared: (1) fitting Gaussian broadened theoretical densities of states to x-ray excited valence band spectra, (2) finding the intersection of a regression line that spans the linear portion of the x-ray excited valence band leading edge with the background between the valence band maximum and the Fermi level, and, (3) determining the energy at which high-resolution ultraviolet photoemission intensity of the leading edge goes to zero. We find that method 1 is not reliable due to limitations in the accuracy of density functional theory when applied to these oxides. In contrast, methods 2 and 3 give physically reasonable results that are in good mutual agreement. The difference in VBM between method 1 and methods 2 & 3 is 0.4 – 0.6 eV, depending on the oxide. The true valence band maximum can be directly and accurately measured using methods 2 & 3 provided the experiment is carried out with adequate energy resolution. PACS numbers: 79.60.Jv a)Electronic mail: sa.chambers@pnl.gov

Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
15010002
Report Number(s):
PNNL-SA-39659; 6292; KC0203020; TRN: US200433%%418
Journal Information:
Journal of Vacuum Science and Technology B--Microelectronics and Nanometer Structures, 22(4):2205-2215, Vol. 22, Issue 4
Country of Publication:
United States
Language:
English