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Title: Mechanistic Study of Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO Thin Films

Abstract

The metalorganic precursor chemistry was studied on Pt(111) surfaces in an 16 O and 18 O backgrounds. Using temperature programmed desorption (TPD) and static secondary ion mass spectrometry (SSIMS). The precursor chemistry of Sr(thd)2 was found to be different on oxide covered Pt(111) surface as compared to the clean Pt(111) surface. In an oxygen ambient, TPD showed at least four different reaction processes which involved the removal of carbon from the precursor ligands on oxide covered Pt(111). In two of these, gas phase oxygen was incorporated in the oxidative products. In contrast, one carbon removing reaction was observed on the clean Pt(111) surface. Isotopic labeling experiments have also been carried out to understand the film-formation reactions in the metalorganic chemical vapor deposition of (Ba,Sr)TiO (BST) films. Time-of-flight SIMS and nuclear reaction analysis (NRA) reveal that the oxygen in the BST films originates from both the gas phase oxidants (18 O) and the precursor ligands (16 O). The ligands substitution by gas phase O plays a more prominent role in the film-formation at lower temperatures. On the other hand, the reactive oxygen radicals produced by microwave plasma involved more in breaking in the O-C bonds than substituting the precursor ligands formore » the film formation. Use of the 50%18 O2-50%N 16 O mixture results in a reduction of 18 O incorporation in the BST films, indicative of the direct involvement of NO in the film-formation reactions. The mechanistic studies are essential for understanding the new BST precursors used in this study, and provide useful information to correlate the film microstructure, step coverage, and dielectric properties with the precursors properties.« less

Authors:
; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab., Richland, WA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
15007648
Report Number(s):
PNNL-SA-32229
Journal ID: ISSN 0021-8979; JAPIAU; KJ0200000; TRN: US200419%%398
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 87; Journal Issue: 10; Other Information: PBD: 15 May 2000; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; CHEMICAL VAPOR DEPOSITION; CHEMISTRY; DESORPTION; DIELECTRIC PROPERTIES; MASS SPECTROSCOPY; MICROSTRUCTURE; MIXTURES; NUCLEAR REACTION ANALYSIS; OXIDES; OXIDIZERS; OXYGEN; PRECURSOR; RADICALS; THIN FILMS; METALORGANIC; LIGANDS; DEPOSITION

Citation Formats

Gao, Yufei, Perkins, Craig L., Tran, Thuy T., Thevuthasan, Suntharampillai, and Henderson, Michael A. Mechanistic Study of Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO Thin Films. United States: N. p., 2000. Web. doi:10.1063/1.373005.
Gao, Yufei, Perkins, Craig L., Tran, Thuy T., Thevuthasan, Suntharampillai, & Henderson, Michael A. Mechanistic Study of Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO Thin Films. United States. doi:10.1063/1.373005.
Gao, Yufei, Perkins, Craig L., Tran, Thuy T., Thevuthasan, Suntharampillai, and Henderson, Michael A. Mon . "Mechanistic Study of Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO Thin Films". United States. doi:10.1063/1.373005.
@article{osti_15007648,
title = {Mechanistic Study of Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO Thin Films},
author = {Gao, Yufei and Perkins, Craig L. and Tran, Thuy T. and Thevuthasan, Suntharampillai and Henderson, Michael A.},
abstractNote = {The metalorganic precursor chemistry was studied on Pt(111) surfaces in an 16 O and 18 O backgrounds. Using temperature programmed desorption (TPD) and static secondary ion mass spectrometry (SSIMS). The precursor chemistry of Sr(thd)2 was found to be different on oxide covered Pt(111) surface as compared to the clean Pt(111) surface. In an oxygen ambient, TPD showed at least four different reaction processes which involved the removal of carbon from the precursor ligands on oxide covered Pt(111). In two of these, gas phase oxygen was incorporated in the oxidative products. In contrast, one carbon removing reaction was observed on the clean Pt(111) surface. Isotopic labeling experiments have also been carried out to understand the film-formation reactions in the metalorganic chemical vapor deposition of (Ba,Sr)TiO (BST) films. Time-of-flight SIMS and nuclear reaction analysis (NRA) reveal that the oxygen in the BST films originates from both the gas phase oxidants (18 O) and the precursor ligands (16 O). The ligands substitution by gas phase O plays a more prominent role in the film-formation at lower temperatures. On the other hand, the reactive oxygen radicals produced by microwave plasma involved more in breaking in the O-C bonds than substituting the precursor ligands for the film formation. Use of the 50%18 O2-50%N 16 O mixture results in a reduction of 18 O incorporation in the BST films, indicative of the direct involvement of NO in the film-formation reactions. The mechanistic studies are essential for understanding the new BST precursors used in this study, and provide useful information to correlate the film microstructure, step coverage, and dielectric properties with the precursors properties.},
doi = {10.1063/1.373005},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 87,
place = {United States},
year = {2000},
month = {5}
}