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Title: In-situ Ion Channeling Study of Gallium Disorder and Gold Profiles in Au-implanted GaN

Abstract

Disorder accumulation and annealing behavior on the Ga sublattice in GaN implanted with 1.0 MeV Au ions (60? off surface normal) at 180 or 300 K have been studied using in-situ Rutherford Backscattering Spectrometry in a <0001>-channeling geometry (RBS/C). Complete amorphization in GaN is attained at 6.0 Au ions/nm and 20 Au ions/nm for irradiation at 180 and 300 K, respectively. A saturation in the Ga disorder at and behind the damage peak was observed at intermediate ion fluences at both 180 and 300 K. No measurable thermal recovery was found at 300 K for full range of damage produced at 180 K. However, distinct epitaxial regrowth in the bulk and Ga reordering at surface occurred after annealing at 870 K. The implanted Au readily diffuses into highly damaged regions at elevated temperatures, and the redistribution of the Au atoms in the implanted GaN varies with the damage profiles. A double-peak Au profile developed with the maxima located in the amorphous surface region and ne ar the Au mean projected range. The result is interpreted as Au atom diffusion into the amorphous regime at surface and trapping at the defects in the crystal structure. This trapping effect is also evidencedmore » in this study by the suppressed recovery of the Au-decorated disorder in GaN.« less

Authors:
; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
15007509
Report Number(s):
PNNL-SA-32606
KC0201020
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics, 87(11):7671-7678
Additional Journal Information:
Journal Name: Journal of Applied Physics, 87(11):7671-7678
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Jiang, Weilin, Weber, William J., and Thevuthasan, Suntharampillai. In-situ Ion Channeling Study of Gallium Disorder and Gold Profiles in Au-implanted GaN. United States: N. p., 2000. Web. doi:10.1063/1.373439.
Jiang, Weilin, Weber, William J., & Thevuthasan, Suntharampillai. In-situ Ion Channeling Study of Gallium Disorder and Gold Profiles in Au-implanted GaN. United States. doi:10.1063/1.373439.
Jiang, Weilin, Weber, William J., and Thevuthasan, Suntharampillai. Thu . "In-situ Ion Channeling Study of Gallium Disorder and Gold Profiles in Au-implanted GaN". United States. doi:10.1063/1.373439.
@article{osti_15007509,
title = {In-situ Ion Channeling Study of Gallium Disorder and Gold Profiles in Au-implanted GaN},
author = {Jiang, Weilin and Weber, William J. and Thevuthasan, Suntharampillai},
abstractNote = {Disorder accumulation and annealing behavior on the Ga sublattice in GaN implanted with 1.0 MeV Au ions (60? off surface normal) at 180 or 300 K have been studied using in-situ Rutherford Backscattering Spectrometry in a <0001>-channeling geometry (RBS/C). Complete amorphization in GaN is attained at 6.0 Au ions/nm and 20 Au ions/nm for irradiation at 180 and 300 K, respectively. A saturation in the Ga disorder at and behind the damage peak was observed at intermediate ion fluences at both 180 and 300 K. No measurable thermal recovery was found at 300 K for full range of damage produced at 180 K. However, distinct epitaxial regrowth in the bulk and Ga reordering at surface occurred after annealing at 870 K. The implanted Au readily diffuses into highly damaged regions at elevated temperatures, and the redistribution of the Au atoms in the implanted GaN varies with the damage profiles. A double-peak Au profile developed with the maxima located in the amorphous surface region and ne ar the Au mean projected range. The result is interpreted as Au atom diffusion into the amorphous regime at surface and trapping at the defects in the crystal structure. This trapping effect is also evidenced in this study by the suppressed recovery of the Au-decorated disorder in GaN.},
doi = {10.1063/1.373439},
journal = {Journal of Applied Physics, 87(11):7671-7678},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {6}
}