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Title: Irradiation Effects and Thermal Annealing Behavior in H2(+)-Implanted 6H-SiC

Abstract

RBS/Channeling has been used to study the accumulation and isochronal recovery of disorder on the Si sublattice in 6H-SiC single crystals irradiated with 100 keV H₂⁺ ions at 100 and 300 K. The disorder at the damage peak shows a sigmoidal dependence on ion fluence for both irradiation temperatures. Dramatic simultaneous recovery is observed for the irradiation at 300 K. At low fluences, isochronal recovery occurs gradually over a wide temperature range. At high fluences, a near amorphous state is produced, and significant recovery does not occur. At intermediate fluences, damage recovery occurs more rapidly between 300 and 670 K. Further annealing at 1070 K results in the formation of blisters. Hydrogen depth profiles at 100 and 300 K are comparable and are well predicted by SRIM-97 simulations. Hydrogen release of about 30% is observed for SiC irradiated at 100 K and subsequently annealed at 1070 K for 20 min.

Authors:
; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
15007506
Report Number(s):
PNNL-SA-31479
KC0201020
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 166-167:374-378
Additional Journal Information:
Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 166-167:374-378
Country of Publication:
United States
Language:
English
Subject:
08 HYDROGEN

Citation Formats

Jiang, Weilin, Weber, William J., Thevuthasan, Suntharampillai, and Wang, S. X. Irradiation Effects and Thermal Annealing Behavior in H2(+)-Implanted 6H-SiC. United States: N. p., 2000. Web. doi:10.1016/S0168-583X(99)01050-2.
Jiang, Weilin, Weber, William J., Thevuthasan, Suntharampillai, & Wang, S. X. Irradiation Effects and Thermal Annealing Behavior in H2(+)-Implanted 6H-SiC. United States. doi:10.1016/S0168-583X(99)01050-2.
Jiang, Weilin, Weber, William J., Thevuthasan, Suntharampillai, and Wang, S. X. Wed . "Irradiation Effects and Thermal Annealing Behavior in H2(+)-Implanted 6H-SiC". United States. doi:10.1016/S0168-583X(99)01050-2.
@article{osti_15007506,
title = {Irradiation Effects and Thermal Annealing Behavior in H2(+)-Implanted 6H-SiC},
author = {Jiang, Weilin and Weber, William J. and Thevuthasan, Suntharampillai and Wang, S. X.},
abstractNote = {RBS/Channeling has been used to study the accumulation and isochronal recovery of disorder on the Si sublattice in 6H-SiC single crystals irradiated with 100 keV H₂⁺ ions at 100 and 300 K. The disorder at the damage peak shows a sigmoidal dependence on ion fluence for both irradiation temperatures. Dramatic simultaneous recovery is observed for the irradiation at 300 K. At low fluences, isochronal recovery occurs gradually over a wide temperature range. At high fluences, a near amorphous state is produced, and significant recovery does not occur. At intermediate fluences, damage recovery occurs more rapidly between 300 and 670 K. Further annealing at 1070 K results in the formation of blisters. Hydrogen depth profiles at 100 and 300 K are comparable and are well predicted by SRIM-97 simulations. Hydrogen release of about 30% is observed for SiC irradiated at 100 K and subsequently annealed at 1070 K for 20 min.},
doi = {10.1016/S0168-583X(99)01050-2},
journal = {Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 166-167:374-378},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}