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Title: APIVT-Grown Silicon Thin Layers and PV Devices: Preprint

Abstract

Large-grained (5-20 ..mu..m) polycrystalline silicon layers have been grown at intermediate temperatures of 750-950C directly on foreign substrates without a seeding layer by iodine vapor transport at atmospheric pressure with rates as high as 3 mm/min. A model is constructed to explain the atypical temperature dependence of growth rate. We have also used this technique to grow high-quality epitaxial layers on heavily doped CZ-Si and on upgraded MG-Si substrates. Possible solar cell structures of thin-layer polycrystalline silicon on foreign substrates with light trapping have been examined, compared, and optimized by two-dimensional device simulations. The effects of grain boundary re-combination on device performance are presented for two grain sizes of 2 and 20 mm. We found that 104 cm/s recombination velocity is adequate for 20-m m grain-sized thin silicon, whereas a very low recombination velocity of 103 cm/s must be accomplished in order to achieve reasonable performance for a 2- mm grain-sized polycrystalline silicon device.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
15006971
Report Number(s):
NREL/CP-520-31441
TRN: US200412%%540
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ATMOSPHERIC PRESSURE; GRAIN SIZE; IODINE; PERFORMANCE; RECOMBINATION; SILICON; SOLAR CELLS; SUBSTRATES; TEMPERATURE DEPENDENCE; TRANSPORT; TRAPPING; VELOCITY; PV; ATMOSPHERIC PRESSURE IODINE VAPOR TRANSPORT (APIVT); MICROCRYSTALLINE SILICON; TWO-DIMENSIONAL DEVICE; SINGLE JUNCTION; EPITAXIAL LAYERS; GRAIN BOUNDARY; RECOMBINATION VELOCITY; SOLAR ENERGY - PHOTOVOLTAICS

Citation Formats

Wang, T. H., Ciszek, T. F., Page, M. R., Bauer, R. E., Wang, Q., and Landry, M. D. APIVT-Grown Silicon Thin Layers and PV Devices: Preprint. United States: N. p., 2002. Web. doi:10.1109/PVSC.2002.1190464.
Wang, T. H., Ciszek, T. F., Page, M. R., Bauer, R. E., Wang, Q., & Landry, M. D. APIVT-Grown Silicon Thin Layers and PV Devices: Preprint. United States. doi:10.1109/PVSC.2002.1190464.
Wang, T. H., Ciszek, T. F., Page, M. R., Bauer, R. E., Wang, Q., and Landry, M. D. Wed . "APIVT-Grown Silicon Thin Layers and PV Devices: Preprint". United States. doi:10.1109/PVSC.2002.1190464. https://www.osti.gov/servlets/purl/15006971.
@article{osti_15006971,
title = {APIVT-Grown Silicon Thin Layers and PV Devices: Preprint},
author = {Wang, T. H. and Ciszek, T. F. and Page, M. R. and Bauer, R. E. and Wang, Q. and Landry, M. D.},
abstractNote = {Large-grained (5-20 ..mu..m) polycrystalline silicon layers have been grown at intermediate temperatures of 750-950C directly on foreign substrates without a seeding layer by iodine vapor transport at atmospheric pressure with rates as high as 3 mm/min. A model is constructed to explain the atypical temperature dependence of growth rate. We have also used this technique to grow high-quality epitaxial layers on heavily doped CZ-Si and on upgraded MG-Si substrates. Possible solar cell structures of thin-layer polycrystalline silicon on foreign substrates with light trapping have been examined, compared, and optimized by two-dimensional device simulations. The effects of grain boundary re-combination on device performance are presented for two grain sizes of 2 and 20 mm. We found that 104 cm/s recombination velocity is adequate for 20-m m grain-sized thin silicon, whereas a very low recombination velocity of 103 cm/s must be accomplished in order to achieve reasonable performance for a 2- mm grain-sized polycrystalline silicon device.},
doi = {10.1109/PVSC.2002.1190464},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed May 01 00:00:00 EDT 2002},
month = {Wed May 01 00:00:00 EDT 2002}
}

Conference:
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