skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe: Preprint

Abstract

This conference paper describes the alloying between CdS and CdTe at the CdS/CdTe interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x= 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of {approx}100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400-450 C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x= 0.14 was identified for the samples treated at 4 30C, which is much higher than expected from the miscibility gap at 430C.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
15006969
Report Number(s):
NREL/CP-520-31435
TRN: US200412%%538
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 May 2002; Related Information: Prepared for the 29th IEEE PV Specialists Conference, 20-24 May
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ADHESION; ALLOYS; DEPOSITION; HEAT TREATMENTS; SOLUBILITY; SUBLIMATION; SUBSTRATES; THICKNESS; THIN FILMS; X-RAY DIFFRACTION; PV; CDS; CDTE; THIN FILM COUPLE; DEVICE STRUCTURE; CHEMICAL-BATH DEPOSITION; CLOSE-SPACE SUBLIMATION (CSS); SOLAR SPECTRUM; HETEROJUNCTION; HOMOJUNCTION; AS-DEPOSITED; GLANCING INCIDENCE X-RAY DIFFRACTION (GIXRD); AUGER ELECTRON SPECTROSCOPY (AES); ATOMIC FORCE MICROSCOPY (AFM); DEVICE PERFORMANCE OPTIMIZATION; ALLOY COMPOSITION; SOLAR ENERGY - PHOTOVOLTAICS

Citation Formats

Dhere, R., Wu, X., Albin, D., Perkins, C., Moutinho, H., and Gessert, T.. Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe: Preprint. United States: N. p., 2002. Web.
Dhere, R., Wu, X., Albin, D., Perkins, C., Moutinho, H., & Gessert, T.. Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe: Preprint. United States.
Dhere, R., Wu, X., Albin, D., Perkins, C., Moutinho, H., and Gessert, T.. Wed . "Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe: Preprint". United States. doi:. https://www.osti.gov/servlets/purl/15006969.
@article{osti_15006969,
title = {Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe: Preprint},
author = {Dhere, R. and Wu, X. and Albin, D. and Perkins, C. and Moutinho, H. and Gessert, T.},
abstractNote = {This conference paper describes the alloying between CdS and CdTe at the CdS/CdTe interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x= 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of {approx}100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400-450 C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x= 0.14 was identified for the samples treated at 4 30C, which is much higher than expected from the miscibility gap at 430C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed May 01 00:00:00 EDT 2002},
month = {Wed May 01 00:00:00 EDT 2002}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: