In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry
Abstract
Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition from amorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.
- Authors:
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 15004255
- Report Number(s):
- NREL/CP-520-33571
TRN: US201015%%440
- DOE Contract Number:
- AC36-99-GO10337
- Resource Type:
- Conference
- Resource Relation:
- Conference: Presented at the National Center for Photovoltaics and Solar Program Review Meeting, 24-26 March 2003, Denver, Colorado
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DILUTION; ELLIPSOMETRY; HYDROGEN; PHASE SPACE; SILICON; SUBSTRATES; THICKNESS; THIN FILMS; CHARACTERIZATION; REAL-TIME SPECTROSCOPIC ELLIPSOMETRY; HOT-WIRE CHEMICAL VAPOR DEPOSITION; HYDROGENATED SILICON; CRYSTALLINITY; Solar Energy - Photovoltaics
Citation Formats
Levi, D, Nelson, B, and Perkins, J. In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry. United States: N. p., 2003.
Web.
Levi, D, Nelson, B, & Perkins, J. In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry. United States.
Levi, D, Nelson, B, and Perkins, J. 2003.
"In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry". United States. https://www.osti.gov/servlets/purl/15004255.
@article{osti_15004255,
title = {In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry},
author = {Levi, D and Nelson, B and Perkins, J},
abstractNote = {Real-time, in-situ characterization of hot-wire chemical vapor deposition (HWCVD) growth of hydrogenated silicon (Si:H) thin films offers unique insight into the properties of the materials and mechanisms of their growth. We have used in-situ spectroscopic ellipsometry to characterize Si:H crystallinity as a function of film thickness and deposition conditions. We find that the transition from amorphous to microcrystalline growth is a strong function of film thickness and hydrogen dilution, and a weak function of substrate temperature. We have expressed this information in terms of a color-coded phase-space map of the amorphous to microcrystalline transition in HWCVD growth on crystalline Si substrates.},
doi = {},
url = {https://www.osti.gov/biblio/15004255},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu May 01 00:00:00 EDT 2003},
month = {Thu May 01 00:00:00 EDT 2003}
}
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