Theoretical and experimental study of α-Sn deposited on CdTe(001)
Abstract
Gray tin films enriched by over 95% {sup 119}Sn and grown by molecular beam epitaxy on CdTe(001) wafers are characterized by inelastic nuclear resonance spectroscopy and investigated theoretically by embedded-cluster density-functional theory methods. Experimental tin phonon densities of states are obtained via analysis of resonant scattering of the 23.88-keV nuclear transition, making use of a high-resolution spectrometer at the Advanced Photon Source. Conventional Moessbauer spectroscopy is used in the scattering mode to determine hyperfine parameters of the {alpha}-Sn phase and, after thermal treatment, the {beta} phase. Electronic structure in the vicinity of Sn-Cd and Sn-Te interfaces is calculated in order to determine local charge transfer and changes in hyperfine parameters for {sup 119}Sn atoms in the interface region. Although, due to sample thickness, both experiments reveal properties essentially of the bulk, the calculations allow investigation of surface and interface regions at an atomic level, thus providing complementary information. Effects of interlayer relaxation are explored.
- Authors:
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Centro Brasileiro de Pesquiasas Fisicas; Northwestern Univ.; Univ. Federal do Espirito Santo
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 15004075
- DOE Contract Number:
- W-31-109-ENG-38
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review, B: Condensed Matter
- Additional Journal Information:
- Journal Volume: 67; Journal Issue: 11; Related Information: 2003; Journal ID: ISSN 0163-1829
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- ENGLISH
- Subject:
- 36 MATERIALS SCIENCE; 43 PARTICLE ACCELERATORS; ADVANCED PHOTON SOURCE; CADMIUM TELLURIDES; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; MOESSBAUER EFFECT; MOLECULAR BEAM EPITAXY; PHONONS; RELAXATION; RESONANCE; SCATTERING; SPECTROMETERS; SPECTROSCOPY; THICKNESS; TIN 119; advanced photon source
Citation Formats
Gómez, J. A., Guenzburger, Diana, Ellis, D. E., Hu, M. Y., Alp, E., Baggio-Saitovitch, E. M., Passamani, E. C., Ketterson, J. B., and Cho, S. Theoretical and experimental study of α-Sn deposited on CdTe(001). United States: N. p., 2003.
Web. doi:10.1103/PhysRevB.67.115340.
Gómez, J. A., Guenzburger, Diana, Ellis, D. E., Hu, M. Y., Alp, E., Baggio-Saitovitch, E. M., Passamani, E. C., Ketterson, J. B., & Cho, S. Theoretical and experimental study of α-Sn deposited on CdTe(001). United States. https://doi.org/10.1103/PhysRevB.67.115340
Gómez, J. A., Guenzburger, Diana, Ellis, D. E., Hu, M. Y., Alp, E., Baggio-Saitovitch, E. M., Passamani, E. C., Ketterson, J. B., and Cho, S. 2003.
"Theoretical and experimental study of α-Sn deposited on CdTe(001)". United States. https://doi.org/10.1103/PhysRevB.67.115340.
@article{osti_15004075,
title = {Theoretical and experimental study of α-Sn deposited on CdTe(001)},
author = {Gómez, J. A. and Guenzburger, Diana and Ellis, D. E. and Hu, M. Y. and Alp, E. and Baggio-Saitovitch, E. M. and Passamani, E. C. and Ketterson, J. B. and Cho, S.},
abstractNote = {Gray tin films enriched by over 95% {sup 119}Sn and grown by molecular beam epitaxy on CdTe(001) wafers are characterized by inelastic nuclear resonance spectroscopy and investigated theoretically by embedded-cluster density-functional theory methods. Experimental tin phonon densities of states are obtained via analysis of resonant scattering of the 23.88-keV nuclear transition, making use of a high-resolution spectrometer at the Advanced Photon Source. Conventional Moessbauer spectroscopy is used in the scattering mode to determine hyperfine parameters of the {alpha}-Sn phase and, after thermal treatment, the {beta} phase. Electronic structure in the vicinity of Sn-Cd and Sn-Te interfaces is calculated in order to determine local charge transfer and changes in hyperfine parameters for {sup 119}Sn atoms in the interface region. Although, due to sample thickness, both experiments reveal properties essentially of the bulk, the calculations allow investigation of surface and interface regions at an atomic level, thus providing complementary information. Effects of interlayer relaxation are explored.},
doi = {10.1103/PhysRevB.67.115340},
url = {https://www.osti.gov/biblio/15004075},
journal = {Physical Review, B: Condensed Matter},
issn = {0163-1829},
number = 11,
volume = 67,
place = {United States},
year = {Sat Mar 01 00:00:00 EST 2003},
month = {Sat Mar 01 00:00:00 EST 2003}
}