Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Mid-Gap and Low-Gap Cells: Final Subcontract Report, 16 January 1998-15 October 2001
This report describes our experimental studies which have been concentrated in roughly five areas. Specifically: (1) We have examined a?Si:H grown very close to the microcrystalline phase boundary, so-called''edge material,'' to help understand why such material is more stable with respect to light-induced degradation; (2) We have also studied the electronic properties, and degradation characteristics of mixed phase material that is mostly a?Si:H, but which contains a significant microcrystalline component; (3) We have examined the electronic properties of high deposition rate material. These studies have included both moderately high deposition rate material (up to 6/s) produced by the PECVD growth method, and extremely high deposition rate material (up to 130/s) produced by the HWCVD growth method. (4) We have examined series of a-Si,Ge:H alloys from several sources. In one extensive series of studies we examined low Ge fraction alloys in an attempt to learn more about the fundamentals of degradation in general. In a couple other studies we evaluated the properties of a-Si,Ge:H alloys produced by methods we had not previously examined. (5) Finally, for three different types of samples we compared basic material properties with companion cell performance data. This was carried out in each case on series of samples for which one or more specific deposition parameters were varied systematically.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 15000750
- Report Number(s):
- NREL/SR-520-32535; XAF-8-17619-05; TRN: US200401%%198
- Resource Relation:
- Other Information: PBD: 1 Jul 2002; Related Information: Work performed by the University of Oregon, Eugene, Oregon
- Country of Publication:
- United States
- Language:
- English
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Identifying electronic properties relevant to improving the performance and stability of amorphous silicon-based mid-gap and low-gap cells: Annual subcontract report, 16 January 1998--15 January 1999
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Related Subjects
42 ENGINEERING
ALLOYS
DEPOSITION
PERFORMANCE
SILICON
STABILITY
PV
MICROCRYSTALLITES
HIGH HYDROGEN DILUTION
X-RAY DIFFRACTION (XRD)
REACTIVE MAGNETRON SPUTTERING
HOT-WIRE CVD FILMS
LIGHT-INDUCED PHOTOCURRENT
A-SI:H
PHOTOCAPACITANCE
LIGHT-SOAKING TIME
DEFECT DENSITY
ISOTHERMAL ANNEAL
SOLAR ENERGY - PHOTOVOLTAICS