Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint
Abstract
Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.
- Authors:
- Publication Date:
- Research Org.:
- National Renewable Energy Lab., Golden, CO. (US)
- Sponsoring Org.:
- US Department of Energy (US)
- OSTI Identifier:
- 15000060
- Report Number(s):
- NREL/CP-520-31033
TRN: US200325%%22
- DOE Contract Number:
- AC36-99-GO10337
- Resource Type:
- Conference
- Resource Relation:
- Conference: Presented at the NCPV Program Review Meeting, Lakewood, CO (US), 10/14/2001--10/17/2001; Other Information: PBD: 1 Oct 2001
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CARRIER LIFETIME; DECAY; RECOMBINATION; TRAPPING; GALLIUM NITRIDES; GALLIUM ARSENIDES; PHOTOCONDUCTIVITY; NCPV; PV; TEMPERATURE DEPENDENCE; GANAS/GAAS; PHOTOCONDUCTIVE DECAY; SOLAR ENERGY - PHOTOVOLTAICS
Citation Formats
Johnston, S W, Ahrenkiel, R K, Friedman, D J, and Kurtz, S R. Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint. United States: N. p., 2001.
Web.
Johnston, S W, Ahrenkiel, R K, Friedman, D J, & Kurtz, S R. Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint. United States.
Johnston, S W, Ahrenkiel, R K, Friedman, D J, and Kurtz, S R. 2001.
"Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint". United States. https://www.osti.gov/servlets/purl/15000060.
@article{osti_15000060,
title = {Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint},
author = {Johnston, S W and Ahrenkiel, R K and Friedman, D J and Kurtz, S R},
abstractNote = {Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.},
doi = {},
url = {https://www.osti.gov/biblio/15000060},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Oct 01 00:00:00 EDT 2001},
month = {Mon Oct 01 00:00:00 EDT 2001}
}
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