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Title: Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS 2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

Abstract

The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS 2 is presented, which is a less explored system compared to direct band gap monolayer MoS 2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS 2 membranes. The photoresponsivity R was measured to be ~1.4 × 10 4 A/W, which is > 10 4 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 10 11 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~10 4. From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.

Authors:
 [1];  [2];  [2];  [1]
  1. Univ. of North Texas, Denton, TX (United States). Dept. of Materials Science and Engineering. PACCAR Technology Inst. Dept. of Electrical Engineering; Univ. of Texas, El Paso, TX (United States). Dept. of Electrical and Computer Engineering
  2. Drexel Univ., Philadelphia, PA (United States). Dept. of Physics
Publication Date:
Research Org.:
Univ. of North Texas, Denton, TX (United States); Drexel Univ., Philadelphia, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1499995
Grant/Contract Number:  
SC0012575; FA9550-15-1-0200
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electrical and electronic engineering; sensors; two-dimensional materials

Citation Formats

Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States: N. p., 2018. Web. doi:10.1038/s41598-018-19367-1.
Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, & Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States. doi:10.1038/s41598-018-19367-1.
Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Fri . "Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts". United States. doi:10.1038/s41598-018-19367-1. https://www.osti.gov/servlets/purl/1499995.
@article{osti_1499995,
title = {Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts},
author = {Saenz, Gustavo A. and Karapetrov, Goran and Curtis, James and Kaul, Anupama B.},
abstractNote = {The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS2 is presented, which is a less explored system compared to direct band gap monolayer MoS2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS2 membranes. The photoresponsivity R was measured to be ~1.4 × 104 A/W, which is > 104 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 1011 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~104. From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.},
doi = {10.1038/s41598-018-19367-1},
journal = {Scientific Reports},
issn = {2045-2322},
number = ,
volume = 8,
place = {United States},
year = {2018},
month = {1}
}

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Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012

  • Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
  • Nano Letters, Vol. 13, Issue 1, p. 100-105
  • DOI: 10.1021/nl303583v