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Title: Elastic and electronic tuning of magnetoresistance in MoTe 2

Abstract

Quasi–two-dimensional transition metal dichalcogenides exhibit dramatic properties that may transform electronic and photonic devices. We report on how the anomalously large magnetoresistance (MR) observed under high magnetic field in MoTe 2, a type II Weyl semimetal, can be reversibly controlled under tensile strain. The MR is enhanced by as much as ~30% at low temperatures and high magnetic fields when uniaxial strain is applied along the a crystallographic direction and reduced by about the same amount when strain is applied along the b direction. We show that the large in-plane electric anisotropy is coupled with the structural transition from the 1T' monoclinic to the T d orthorhombic Weyl phase. A shift of the T d-1T' phase boundary is achieved by minimal tensile strain. The sensitivity of the MR to tensile strain suggests the possibility of a nontrivial spin-orbital texture of the electron and hole pockets in the vicinity of Weyl points. Our ab initio calculations show a significant orbital mixing on the Fermi surface, which is modified by the tensile strains.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [2];  [1]; ORCiD logo [1]
  1. Univ. of Virginia, Charlottesville, VA (United States). Dept. of Physics
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States)
Publication Date:
Research Org.:
Univ. of Virginia, Charlottesville, VA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1499951
Grant/Contract Number:  
FG02-01ER45927
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Science Advances
Additional Journal Information:
Journal Volume: 3; Journal Issue: 12; Journal ID: ISSN 2375-2548
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Yang, Junjie, Colen, Jonathan, Liu, Jun, Nguyen, Manh Cuong, Chern, Gia-wei, and Louca, Despina. Elastic and electronic tuning of magnetoresistance in MoTe2. United States: N. p., 2017. Web. doi:10.1126/sciadv.aao4949.
Yang, Junjie, Colen, Jonathan, Liu, Jun, Nguyen, Manh Cuong, Chern, Gia-wei, & Louca, Despina. Elastic and electronic tuning of magnetoresistance in MoTe2. United States. doi:10.1126/sciadv.aao4949.
Yang, Junjie, Colen, Jonathan, Liu, Jun, Nguyen, Manh Cuong, Chern, Gia-wei, and Louca, Despina. Fri . "Elastic and electronic tuning of magnetoresistance in MoTe2". United States. doi:10.1126/sciadv.aao4949. https://www.osti.gov/servlets/purl/1499951.
@article{osti_1499951,
title = {Elastic and electronic tuning of magnetoresistance in MoTe2},
author = {Yang, Junjie and Colen, Jonathan and Liu, Jun and Nguyen, Manh Cuong and Chern, Gia-wei and Louca, Despina},
abstractNote = {Quasi–two-dimensional transition metal dichalcogenides exhibit dramatic properties that may transform electronic and photonic devices. We report on how the anomalously large magnetoresistance (MR) observed under high magnetic field in MoTe2, a type II Weyl semimetal, can be reversibly controlled under tensile strain. The MR is enhanced by as much as ~30% at low temperatures and high magnetic fields when uniaxial strain is applied along the a crystallographic direction and reduced by about the same amount when strain is applied along the b direction. We show that the large in-plane electric anisotropy is coupled with the structural transition from the 1T' monoclinic to the Td orthorhombic Weyl phase. A shift of the Td-1T' phase boundary is achieved by minimal tensile strain. The sensitivity of the MR to tensile strain suggests the possibility of a nontrivial spin-orbital texture of the electron and hole pockets in the vicinity of Weyl points. Our ab initio calculations show a significant orbital mixing on the Fermi surface, which is modified by the tensile strains.},
doi = {10.1126/sciadv.aao4949},
journal = {Science Advances},
issn = {2375-2548},
number = 12,
volume = 3,
place = {United States},
year = {2017},
month = {12}
}

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Works referenced in this record:

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193

Two-dimensional atomic crystals
journal, July 2005

  • Novoselov, K. S.; Jiang, D.; Schedin, F.
  • Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453
  • DOI: 10.1073/pnas.0502848102

Ab initiomolecular dynamics for liquid metals
journal, January 1993


Bandgap Engineering of Strained Monolayer and Bilayer MoS2
journal, July 2013

  • Conley, Hiram J.; Wang, Bin; Ziegler, Jed I.
  • Nano Letters, Vol. 13, Issue 8, p. 3626-3630
  • DOI: 10.1021/nl4014748

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013

  • Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki
  • Nature Chemistry, Vol. 5, Issue 4, p. 263-275
  • DOI: 10.1038/nchem.1589

Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279