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Title: Designing for strain in silicon quantum dot devices.

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1498821
Report Number(s):
SAND2018-2206C
661056
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the American Physical Society March Meeting held March 5-9, 2018 in Los Angeles, CA.
Country of Publication:
United States
Language:
English

Citation Formats

Jacobson, Noah Tobias. Designing for strain in silicon quantum dot devices.. United States: N. p., 2018. Web.
Jacobson, Noah Tobias. Designing for strain in silicon quantum dot devices.. United States.
Jacobson, Noah Tobias. Thu . "Designing for strain in silicon quantum dot devices.". United States. https://www.osti.gov/servlets/purl/1498821.
@article{osti_1498821,
title = {Designing for strain in silicon quantum dot devices.},
author = {Jacobson, Noah Tobias},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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