Single hole spin relaxation probed by fast single-shot latched charge sensing

Bogan, Alex; Studenikin, Sergei; Korkusinski, Marek; Gaudreau, Louis; Zawadzki, Piotr; Sachrajda, Andy; Tracy, Lisa; Reno, John; Hargett, Terry

doi:10.1038/s42005-019-0113-0

Title: Single hole spin relaxation probed by fast single-shot latched charge sensing

Journal Article · Mon Feb 18 00:00:00 EST 2019 · Communications Physics

DOI:https://doi.org/10.1038/s42005-019-0113-0· OSTI ID:1498473

Bogan, Alex ^[1]; Studenikin, Sergei ^[1]; Korkusinski, Marek ^[2]; Gaudreau, Louis ^[2]; Zawadzki, Piotr ^[2]; Sachrajda, Andy ^[2]; Tracy, Lisa ^[3]; Reno, John ^[4]; Hargett, Terry ^[4]

National Research Council of Canada, Ottawa, ON (Canada). Security and Disruptive Technologies Research Centre; Univ. of Waterloo, ON (Canada). Dept. of Physics and Astronomy
National Research Council of Canada, Ottawa, ON (Canada). Security and Disruptive Technologies Research Centre
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

Hole spins have recently emerged as attractive candidates for solid-state qubits for quantum computing. Their state can be manipulated electrically by taking advantage of the strong spin-orbit interaction (SOI). Crucially, these systems promise longer spin coherence lifetimes owing to their weak interactions with nuclear spins as compared to electron spin qubits. Here we measure the spin relaxation time T₁ of a single hole in a GaAs gated lateral double quantum dot device. We propose a protocol converting the spin state into long-lived charge configurations by the SOI-assisted spin-flip tunneling between dots. By interrogating the system with a charge detector we extract the magnetic-field dependence of T₁ ∝ B^-5 for fields larger than B = 0.5 T, suggesting the phonon-assisted Dresselhaus SOI as the relaxation channel. This coupling limits the measured values of T₁ from ~400 ns at B = 1.5 T up to ~60 μs at B = 0.5 T.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); National Research Council of Canada, Ottawa, ON (Canada)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); Natural Sciences and Engineering Research Council of Canada (NSERC)

Grant/Contract Number:: NA0003525

OSTI ID:: 1498473

Report Number(s):: SAND-2019-0391J; 671538

Journal Information:: Communications Physics, Vol. 2; ISSN 2399-3650

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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