Giant enhancements in electronic transport and photoelectric properties of bismuth oxysulfide by pressure-driven 2D–3D structural reconstruction

Zhang, Ganghua; Zhang, Qian; Hu, Qingyang; Wang, Bihan; Yang, Wenge

doi:10.1039/c8ta11168e

Title: Giant enhancements in electronic transport and photoelectric properties of bismuth oxysulfide by pressure-driven 2D–3D structural reconstruction

Journal Article · Tue Jan 01 00:00:00 EST 2019 · Journal of Materials Chemistry. A

DOI:https://doi.org/10.1039/c8ta11168e· OSTI ID:1497161

Zhang, Ganghua ^[1]; Zhang, Qian ^[2];

^[2]; Wang, Bihan ^[2];

^[2]

Center for High Pressure Science and Technology Advanced Research (HPSTAR); Shanghai 201203; P. R. China; Shanghai Key Laboratory of Engineering Materials Application and Evaluation; Shanghai Research Institute of Materials
Center for High Pressure Science and Technology Advanced Research (HPSTAR); Shanghai 201203; P. R. China

By applying hydrostatic pressure, a structural evolution from 2D layered to 3D network structure has been realized in bismuth oxysulfide Bi₉O_7.5S₆, resulting in giant enhancements in electric conductivity and photoelectric current.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: DOE - BASIC ENERGY SCIENCESDOE-NNSANSFFOREIGN

OSTI ID:: 1497161

Journal Information:: Journal of Materials Chemistry. A, Vol. 7, Issue 8; ISSN 2050-7488

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: ENGLISH

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