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Title: Mechanisms of Semiconducting 2H to Metallic 1T Phase Transition in Two-dimensional MoS 2 Nanosheets

Abstract

In the present work, phase transition mechanisms from semiconducting 2H phase to metallic 1T phase in MoS 2 nanosheets were studied using density functional theory (DFT) method. Various 2H→1T phase transition mechanisms that consist of nucleation and propagation steps, which simulated by collective rotational and rotational/translational movements, single atom translational movement, as well as the gliding movement of one row for sulfur (S) atoms, on both the basal plane and Mo- and S-edges with different S coverages were investigated. On the perfect basal plane, the 1T phase nucleation is unlikely due to the extremely high barrier of 2.25 eV/atom. Whereas the presence of defective S vacancies on the basal plane dramatically facilitate the 1T phase nucleation and propagation around the defective sites by the collective rotational movement of three S atoms. On the 2H phase basal plane with two S vacancies, the kinetic barriers for the 1T phase nucleation are as low as of 0.66~0.77 eV/atom. Like the promoting effect of S vacancies on the phase transition over the basal plane, DFT results suggest that the S coverage on the Mo- and S-edges will affect the 1T phase nucleation and propagation. The 1T phase nucleation starting with the translational movementmore » of single S atom on the bare Mo-edge and the gliding movement of an entire row of S atoms on the S-edge with 50%S coverage are kinetically favorable. While the 1T phase formation at the Mo-edge with 50%S coverage and the S-edge with 100% S coverage are unlikely. The present work not only confirms the important role of S vacancies/coverages in the 2H-1T phase transition, but also provides new insight into how and where the 2H-1T phase transition occurs at the atomic level, which also sheds light on the general phase transition mechanism for two-dimensional transition metal dichalcogenide materials. The work was financially supported by the National Natural Science Foundation of China (No. 21476012, 21571012, and 91534201). Q. Jin appreciates the joint Ph.D. scholarship support from the China Scholarship Council. The computing time was granted by a scientific theme user proposal in the William R. Wiley Environmental Molecular Sciences Laboratory (EMSL), which is a U.S. Department of Energy national scientific user facility located at PNNL in Richland, Washington. D. Mei is supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences.« less

Authors:
 [1];  [2];  [2]; ORCiD logo [3]
  1. State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Institute of Integrated Catalysis, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
  2. State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; College of Environmental and Energy Engineering, Beijing University of Technology, Beijing 100022, China
  3. Institute of Integrated Catalysis, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1497073
Report Number(s):
PNNL-SA-137922
Journal ID: ISSN 1932-7447
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Volume: 122; Journal Issue: 49; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
Molybdenum disulfide, phase transition, sulfur vacancy, density functional theory

Citation Formats

Jin, Qiu, Liu, Ning, Chen, Biaohua, and Mei, Donghai. Mechanisms of Semiconducting 2H to Metallic 1T Phase Transition in Two-dimensional MoS2 Nanosheets. United States: N. p., 2018. Web. doi:10.1021/acs.jpcc.8b10256.
Jin, Qiu, Liu, Ning, Chen, Biaohua, & Mei, Donghai. Mechanisms of Semiconducting 2H to Metallic 1T Phase Transition in Two-dimensional MoS2 Nanosheets. United States. doi:10.1021/acs.jpcc.8b10256.
Jin, Qiu, Liu, Ning, Chen, Biaohua, and Mei, Donghai. Tue . "Mechanisms of Semiconducting 2H to Metallic 1T Phase Transition in Two-dimensional MoS2 Nanosheets". United States. doi:10.1021/acs.jpcc.8b10256.
@article{osti_1497073,
title = {Mechanisms of Semiconducting 2H to Metallic 1T Phase Transition in Two-dimensional MoS2 Nanosheets},
author = {Jin, Qiu and Liu, Ning and Chen, Biaohua and Mei, Donghai},
abstractNote = {In the present work, phase transition mechanisms from semiconducting 2H phase to metallic 1T phase in MoS2 nanosheets were studied using density functional theory (DFT) method. Various 2H→1T phase transition mechanisms that consist of nucleation and propagation steps, which simulated by collective rotational and rotational/translational movements, single atom translational movement, as well as the gliding movement of one row for sulfur (S) atoms, on both the basal plane and Mo- and S-edges with different S coverages were investigated. On the perfect basal plane, the 1T phase nucleation is unlikely due to the extremely high barrier of 2.25 eV/atom. Whereas the presence of defective S vacancies on the basal plane dramatically facilitate the 1T phase nucleation and propagation around the defective sites by the collective rotational movement of three S atoms. On the 2H phase basal plane with two S vacancies, the kinetic barriers for the 1T phase nucleation are as low as of 0.66~0.77 eV/atom. Like the promoting effect of S vacancies on the phase transition over the basal plane, DFT results suggest that the S coverage on the Mo- and S-edges will affect the 1T phase nucleation and propagation. The 1T phase nucleation starting with the translational movement of single S atom on the bare Mo-edge and the gliding movement of an entire row of S atoms on the S-edge with 50%S coverage are kinetically favorable. While the 1T phase formation at the Mo-edge with 50%S coverage and the S-edge with 100% S coverage are unlikely. The present work not only confirms the important role of S vacancies/coverages in the 2H-1T phase transition, but also provides new insight into how and where the 2H-1T phase transition occurs at the atomic level, which also sheds light on the general phase transition mechanism for two-dimensional transition metal dichalcogenide materials. The work was financially supported by the National Natural Science Foundation of China (No. 21476012, 21571012, and 91534201). Q. Jin appreciates the joint Ph.D. scholarship support from the China Scholarship Council. The computing time was granted by a scientific theme user proposal in the William R. Wiley Environmental Molecular Sciences Laboratory (EMSL), which is a U.S. Department of Energy national scientific user facility located at PNNL in Richland, Washington. D. Mei is supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences.},
doi = {10.1021/acs.jpcc.8b10256},
journal = {Journal of Physical Chemistry. C},
issn = {1932-7447},
number = 49,
volume = 122,
place = {United States},
year = {2018},
month = {11}
}